LDTC123TKT1G LRC | Alldatasheet
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2.2 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits 100 200 150 −55 to +150 Unit V V V mA mW Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature V CBO V CEO V EBO I C Pc Tj Tstg zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions R 1.54 2.2 2.86 kΩ BV CBO −− V BV CEO −− V BV EBO −− V I CBO 0.5 µA I EBO 0.5 µA V CE(sat) − 0.3 V h FE 100 250 600 f T 250 MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Characteristics of built-in transistor. I C 50µA I C 1mA I E 50µA V CB 50V V EB I C B 5mA/0.25mA I C 1mA , V CE V CB 10V , I E −5mA , f 100MHz SC-89
LESHAN RADIO COMPANY, LTD. zElectrical characteristic curves LDTC123TKT1G 100 200 500 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m V CE =5V Fig.1 DC Current gain vs. Collector Current DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (A) Ta=100°C 25°C −40°C 100m 200m 500m 10m 20m 50m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m I C B =10 Fig.2 Collector-emitter saturation voltage vs. Collector Current COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (A) Ta=100°C 25°C −40°C
LESHAN RADIO COMPANY, LTD. NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. SC-89