LDTC114EM3T5G LRC | Alldatasheet

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LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G_S-1/10 Bias Resistor Transistors NPN Silicon Surface Mount Transistors With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-723 package which is designed for low power surface mount applications. LDTC114EM3T5G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO Vdc Collector-Emitter Voltage VCEO Vdc Collector Current IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD 260 (Note 1) 600 (Note 2) 2.0 (Note 1) 4.8 (Note 2) mW Thermal Resistance – Junction-to-Ambient RθJA 480 (Note 1) 205 (Note 2) °C/W Storage Temperature Range Tstg –55 to +150 xx = Specific Device Code M = Date Code MARKING DIAGRAM XX M mW/°C ƽSimplifies Circuit Design ƽReduces Component Count ƽThe SOT-723 Package can be Soldered using Wave or Reflow. ƽAvailable in 4 mm, 8000 Unit Tape & Reel ƽThese are Pb-Free Devices. ƽReduces Board Space Version 1.0 Series SOT-723 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) PIN 1 BASE (INPUT) TJ 150 Junction Temperature 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad

LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G_S-2/10 LDTC114EM3T5G Series DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Package Shipping LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G 4.7 2.2 4.7 4.7 2.2 100 2.2 4.7 100 SOT−723 (Pb−Free) 8000/Tape & Reel Version 1.0

LESHAN RADIO COMPANY, LTD. LDTC114EM3T5G_S-3/10 LDTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO 500 nAdc Emitter−Base Cutoff Current LDTC114EM3T5G (VEB = 6.0 V, IC = 0) LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G IEBO 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 0.2 mAdc Collector−Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO Vdc ON CHARACTERISTICS (Note 3) DC Current Gain LDTC114EM3T5G (VCE = 10 V, IC = 5.0 mA) LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G hFE 160 160 8.0 160 100 140 140 350 350 200 150 140 150 140 350 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) LDTC123EM3T5G (IC = 10 mA, IB = 1 mA) LDTC143TM3T5G/LDTC114TM3T5G/ LDTC143EM3T5G/LDTC143ZM3T5G/ LDTC124XM3T5G/LDTC144TM3T5G VCE(sat) 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) LDTC114EM3T5G LDTC124EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) LDTC144EM3T5G LDTC144TM3T5G (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) LDTC115EM3T5G (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) LDTC144WM3T5G VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. Version 1.0

  1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.

Figure 1. Derating Curve

D E b e A L C H −Y− −X− X 0.08 (0.0032) Y E 1.0 0.039 mm inches 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM MIN NOM MAX MILLIMETERS A 0.45 0.50 0.55 b 0.15 0.20 0.27 0.25 0.3 0.35 C 0.07 0.12 0.17 D 1.15 1.20 1.25 E 0.75 0.80 0.85 e

0.40 BSC

H 1.15 1.20 1.25 L 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034

0.016 BSC

0.045 0.047 0.049 0.0059 0.0079 0.0098 MIN NOM MAX INCHES E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. SOT−723 SOLDERING FOOTPRINT Version 1.0 LESHAN RADIO COMPANY, LTD.