LDTC115TET1G LRC | Alldatasheet
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zAbsolute maximum ratings (Ta=25°C) zElectrical characteristics (Ta=25°C) Parameter Limits 100 200 150 −55 to +150 Unit V V V mA mW Collector-base voltage Collector-emitter voltag Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO I C Pc Tj Tstg Parameter Symbol Min. Typ. Max. Unit Conditions 100 250 250 100 0.5 0.5 0.3 600 130 V V V µA µA V MHz kΩ I C 50µA I C 1mA I E 50µA V CB 50V V EB I C B 1mA/0.1mA I C 1mA, V CE V CE 10V, I E 5mA, f 100MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Characteristics of built-in transistor. BV CBO BV CEO BV EBO I CBO I EBO V CE(sat) h FE f T R SC-89
LESHAN RADIO COMPANY, LTD. LDTC115TET1G NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. SC-89