LDTC114EET1G

LDTC114EET1G_15 LRC | Alldatasheet

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NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications.

• Simplifies Circuit Design  Reduces Board Space  Reduces Component Count  The SC-89 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. SC-89 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) PIN 1 BASE (INPUT) LESHAN RADIO COMPANY, LTD. RoHS requirements.
• We declare that the material of product compliance with LDTC114EET1G Series MAXIMUM RATINGS A = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage V CBO Vdc Collector-Emitter Voltage V CEO Vdc Collector Current I C 100 mAdc THERMAL CHARACTERISTICS Rating Symbol Value Unit Total Device Dissipation, FR−4 Board (Note 1) @ T A = 25°C Derate above 25°C P D 200 1.6 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) R /C0113JA 600 °C/W Total Device Dissipation, FR−4 Board (Note 2) @ T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) R /C0113JA 400 °C/W Junction and Storage Temperature Range T J , T stg −55 to +150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad Rev.B 1/9 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LDTC114EET1G Series

LESHAN RADIO COMPANY, LTD. ORDERING INFORMATION AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Package Shipping LDTC114EET1G SC−89

3000 Tape & Reel

SC−89 SC−89 SC−89 SC−89 4.7 LDTC143TET1G SC−89 2.2 2.2 LDTC123EET1G SC−89 4.7 4.7 LDTC143EET1G SC−89 4.7 LDTC143ZET1G SC−89 SC−89 2.2 LDTC123JET1G SC−89 SC−89 SC−89 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

ELECTRICAL CHARACTERISTICS

A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (V CB = 50 V, I E = 0) I CBO 100 nAdc Collector−Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO 500 nAdc Emitter−Base Cutoff Current LDTC114EET1G EB = 6.0 V, I C = 0) LDTC124EET1G LDTC144EET1G LDTC114YET1G LDTC114TET1G LDTC143TET1G LDTC123EET1G LDTC143EET1G LDTC143ZET1G LDTC124XET1G LDTC123JET1G LDTC115EET1G LDTC144WET1G I EBO 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector−Base Breakdown Voltage (I C = 10 /C0109A, I E = 0) V (BR)CBO Vdc Collector−Emitter Breakdown Voltage (Note 3) C = 2.0 mA, I B = 0) V (BR)CEO Vdc LDTC114EET1G Series,S-LDTC114EET1G Series Rev.B 2/9

(Note 3) CE = 10 V, I C LDTC144EET1G LDTC114YET1G LDTC114TET1G LDTC143TET1G LDTC123EET1G LDTC143EET1G LDTC143ZET1G LDTC124XET1G LDTC123JET1G LDTC115EET1G LDTC144WET1G h FE 160 160 8.0 100 140 140 350 350 200 150 140 150 140 Collector−Emitter Saturation Voltage (I C = 10 mA, I B = 0.3 mA) C = 10 mA, I B = 5 mA) LDTC123EET1G C = 10 mA, I B = 1 mA) LDTC143TET1G/LDTC114TET1G/ LDTC143EET1G/LDTC143ZET1G/LDTC124XET1G V CE(sat) 0.25 Vdc Output Voltage (on) CC = 5.0 V, V B = 2.5 V, R L = 1.0 k/C0087) LDTC114EET1G LDTC124EET1G LDTC114YET1G LDTC114TET1G LDTC143TET1G LDTC123EET1G LDTC143EET1G LDTC143ZET1G LDTC124XET1G LDTC123JET1G CC = 5.0 V, V B = 3.5 V, R L = 1.0 k/C0087) LDTC144EET1G CC = 5.0 V, V B = 5.5 V, R L = 1.0 k/C0087) LDTC115EET1G CC = 5.0 V, V B = 4.0 V, R L = 1.0 k/C0087) LDTC144WET1G V OL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 k/C0087) CC = 5.0 V, V B = 0.25 V, R L = 1.0 k/C0087) LDTC143TET1G LDTC143ZET1G LDTC114TET1G V OH 4.9 Vdc 3. Pulse Test: Pulse Width < 300 /C0109s, Duty Cycle < 2.0% Characteristic Symbol Min Typ Max Unit A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 32.9 4.7 2.2 4.7 4.7 2.2 100 28.6 61.1 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 k/C0087 LDTC144EET1G/LDTC115EET1G LDTC114YET1G LDTC143TET1G/LDTC114TET1G LDTC123EET1G/LDTC143EET1G LDTC143ZET1G LDTC124XET1G LDTC123JET1G LDTC144WET1G R 0.8 0.17 0.8 0.055 0.38 0.038 1.7 1.0 0.21 1.0 0.1 0.47 0.047 2.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6 DC Current Gain LDTC114EET1G = 5.0 mA) LDTC124EET1G LDTC144EET1G LDTC114YET1G LDTC114TET1G LDTC143TET1G LDTC123EET1G LDTC143EET1G LDTC143ZET1G LDTC124XET1G LDTC123JET1G LDTC115EET1G LDTC144WET1G LDTC114EET1G LDTC124EET1G Input Resistor Resistor Ratio LDTC114EET1G/LDTC124EET1G/ LESHAN RADIO COMPANY, LTD. Rev.B 3/9 LDTC114EET1G Series,S-LDTC114EET1G Series LDTC115 EET1G

0.01 0.1 0 1 02 03 04 05 06 0 100 1000 0 2 04 06 08 0 1 0 0 1 2 0 TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EET1G LESHAN RADIO COMPANY, LTD. Rev.B 4/9 0.5 1.5 2.5 3.5 4.5 0 1 02 03 04 05 06 0 f = 1 MHz IE = 0 A 0.001 0.01 0.1 100 0 0.5 1 1.5 2 2.5 3 3.5 Fig. 3 OUTPUT CAPACITANCE Cob, CAPACITANCE (pF) VR, REVERSE BIAS VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Vin, INPUT VOLTAGE (V) Fig. 4 OUTPUT CURRENT VS INPUT VOLTAGE VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED) IC, COLLECTOR CURRENT (mA) Fig. 2 DC CURRENT GAINFig. 1 VCE(sat) VS IC LDTC114EET1G Series,S-LDTC114EET1G Series Ic/Ib=10 -55℃ 25℃ 75℃ 100℃ 125℃ Vce=10V -55℃ 25℃ 75℃ 100℃ 125℃ Vo=5V -55℃ -25℃ 25℃ 75℃ 125℃

Fig. 5 INPUT VOLTAGE VS OUTPUT CURRENT IC, COLLECTOR CURRENT (mA) Vin, INPUT VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EET1G LESHAN RADIO COMPANY, LTD. Rev.B 5/9 LDTC114EET1G Series,S-LDTC114EET1G Series Vo=0.2V COLLECTOR CURRENT:Ic(mA) -55℃ -25℃ 25℃ 75℃ 125℃

0.01 0.1 0 1 02 03 04 05 06 0 100 1000 1 10 100 TYPICAL ELECTRICAL CHARACTERISTICS − LDTC115EET1G LESHAN RADIO COMPANY, LTD. Rev.B 6/9 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED) IC, COLLECTOR CURRENT (mA) Fig. 7 DC CURRENT GAINFig. 6 VCE(sat) VS IC 0.5 1.5 2.5 3.5 4.5 0 1 02 03 04 05 06 0 f = 1 MHz IE = 0 A 0.001 0.01 0.1 100 0 0.5 1 1.5 2 2.5 3 3.5 Fig. 8 OUTPUT CAPACITANCE Cob, CAPACITANCE (pF) VR, REVERSE BIAS VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Vin, INPUT VOLTAGE (V) Fig. 9 OUTPUT CURRENT VS INPUT VOLTAGE LDTC114EET1G Series,S-LDTC114EET1G Series Ic/Ib=10 -55℃ 25℃ 75℃ 100℃ 125℃ -55℃ 25℃ 75℃ 100℃ 125℃ Vce=10V Vo=5V -55℃ -25℃ 25℃ 75℃ 125℃

TYPICAL ELECTRICAL CHARACTERISTICS − LDTC115EET1G LESHAN RADIO COMPANY, LTD. Rev.B 7/9 Fig. 10 INPUT VOLTAGE VS OUTPUT CURRENT IC, COLLECTOR CURRENT (mA) Vin, INPUT VOLTAGE (V) LDTC114EET1G Series,S-LDTC114EET1G Series -55℃ -25℃ 25℃ 75℃ 125℃ Vo=0.2V

TYPICAL APPLICATIONS FOR NPN BRTs LOAD +12 V IN OUT V CC ISOLATED LOAD FROM /C0109P OR OTHER LOGIC +12 V LESHAN RADIO COMPANY, LTD. Rev.B 8/9 Fig. 11 LEVEL SHIFTER:CONNECTS 12 TO 24 VOLT CIRCUITS TO LOGIC Fig. 12 OPEN COLLECTOR INVERTER: INVERTS THE INPUT SIGNAL Fig. 13 INEXPENSIVE,UNREGULATED CURRENT SOURCE LDTC114EET1G Series,S-LDTC114EET1G Series

G M 0.08 (0.003) X D 3 PL J -X- -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. A B Y N 2 PL K C -T- SEATING PLANE DIM A MIN NOM MIN NOM INCHES 1.50 1.60 1.70 0.059 MILLIMETERS B 0.75 0.85 0.95 0.030 C 0.60 0.70 0.80 0.024 D 0.23 0.28 0.33 0.009 G 0.50 BSC H 0.53 REF J 0.10 0.15 0.20 0.004 K 0.30 0.40 0.50 0.012 L 1.10 REF S 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013

0.020 BSC

0.021 REF

0.006 0.008 0.016 0.020

0.043 REF

−−− 10 −−− 10 0.063 0.067 MAX MAX /C0095 /C0095 /C0095 /C0095 M H H L G RECOMMENDED PATTERN OF SOLDER PADS S SC LESHAN RADIO COMPANY, LTD. Rev.B 9/9 LDTC114EET1G Series,S-LDTC114EET1G Series