LDTB123TLT1G_15 LRC | Alldatasheet
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2.2 zAbsolute maximum ratings (Ta=25°C) COLLEC TOR EMITTER BASE 1) Built-in bias resistors enable the configuration of an inverter ci rcuit without conn ecting ex ternal inp ut resistors (see equivalent circuit). 2) The bias resistors c onsist of th in-film r esistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. zElectrical characteristics (Ta=25°C) LimitsParameter Symbol V CBO −50 −40 −500 200 150 −55 to +150 V V CEO V EBO V V mA mW C C I C P C Tj Tstg Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature SOT-23 Rev.O 1/3 S-LDTB123TLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LDTB123TLT1G S-LDTB123TLT3G
LESHAN RADIO COMPANY, LTD. zElectrical characteristic curves LDTB123TLT1G Rev.O 2/3 ;S-LDTB123TLT1G
LESHAN RADIO COMPANY, LTD. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 SOT D JK L A C B S H GV mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 Rev.O 3/3 LDTB123TLT1G ;S-LDTB123TLT1G