LDTB113ZLT1G LRC | Alldatasheet

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Technical content

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping K8 1 10 3000/Tape & Reel LESHAN RADIO COMPANY, LTD. 10000/Tape & Reel We declare that the material of product compliance with RoHS requirements. S-LDTB113ZLT1G 1) Built-in bias resistors enable the configuration of an inverter circui t without con necting ex ternal in put resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. Inverter, Interface, Driver Features

Applications

zAbsolute maximum ratings (Ta=25°C) zElectrical characteristics (Ta=25°C) LDTB113ZLT1G S-LDTB113ZLT3G 1 10K8 Parameter Symbol V CC −50 −10 to +5 −500 200 150 −55 to +150 V V IN V mA mW I C P D Tj Tstg Unit C C Limits Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Parameter Symbol V I(off) V I(on) V O(on) I I I O(off) R G I R f T Min. 0.7 200 −0.3 −0.3 −7.2 −0.5 1.3 V V CC −5V, I O −100µA V O −0.3V, I O −20mA I O I −50mA/−2.5mA V I = −5V V CC −50V, V I =0V V O − 5V, I O −50mA V CE −10V I E =50mA f=100MHz V mA µA kΩ MHz Typ. Max. Unit Conditions Input voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency ∗ Transition frequency of the device SOT-23 Rev.O 1/3 LDTB113ZLT1G S - Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LDTB113ZLT1G LDTB113ZLT3G

LESHAN RADIO COMPANY, LTD. zElectrical characteristic curves ;S-LDTB113ZLT1G V O 0.3V INPUT VOLTAGE : V I (on) V OUTPUT CURRENT : I O -100m -200m -500m -10 -20 -50 -100 -1m-500µ -2m -5m -10m -20m -50m-100m-200m -500m Fig.1 Input voltage vs. output current (ON characteristics) Ta 40 C 25 C 100 C -10m -5m -2m -1m -500µ -200µ -100µ -50µ -20µ -10µ -5µ -2µ -1µ V CC INPUT VOLTAGE : V I (off) OUTPUT CURRENT : Io ( Fig.2 Output current vs. input voltage (OFF characteristics) Ta=100 C 25 C 40 C V O −5V DC CURRENT GAIN : G I OUTPUT CURRENT : I O 500 200 100 -1m-500µ -2m -5m -10m -20m -50m-100m-200m -500m Fig.3 DC current gain vs. output current Ta=100 C 25 C −40 C l O I =20 -500m -200m -100m -10m -50m -5m -20m -2m -1m OUTPUT CURRENT : I O OUTPUT VOLTAGE : V O (on) -1m-500µ -2m -5m -10m -20m -50m-100m-200m -500m Fig.4 Output voltage vs. output current Ta=100 C 25 C −40 C Rev.O 2/3 LDTB113ZLT1G

LESHAN RADIO COMPANY, LTD. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 SOT D JK L A C B S H GV mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 Rev.O 3/3 ;S-LDTB113ZLT1GLDTB113ZLT1G