LDTA125TET1G LRC | Alldatasheet

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zAbsolute maximum ratings (Ta=25°C) 200 zElectrical characteristics (Ta=25°C) Parameter Symbol V CBO V CEO V EBO I C Pc Tj Tstg Limits −50 −50 −100 200 150 −55 to +150 Unit V V V mA mW Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Parameter Symbol Min. Typ. Max. Unit Conditions BV CBO BV CEO BV EBO I CBO I EBO V CE(sat) h FE f T R −50 −50 100 140 250 250 200 −0.5 −0.5 −0.3 600 260 V V V µA µA V MHz kΩ I C = −50µA I C = −1mA I E = −50µA V CB = −50V V EB = −4V I C = −0.5mA , I B = −0.05mA I C = −1mA , V CE = −5V V CE = −10V , I E =5mA , f 100MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Characteristics of built-in transistor SC-89

LESHAN RADIO COMPANY, LTD. zElectrical characteristic curves LDTA125TET1G 500 200 100 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m V CE =5V Fig.1 DC current gain vs. Collector current DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (A) Ta=100°C Ta=25°C Ta= −40°C 500m 200m 100m 50m 20m 10m 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m I C I B =10/1 Fig.2 Collector-Emitter saturation voltage vs. Collector current COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) COLLECTOR CURRENT : I C (A) Ta=100°C Ta=25°C Ta= −40°C

LESHAN RADIO COMPANY, LTD. LDTA125TET1G NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. SC-89