LDTA124TET1G LRC | Alldatasheet
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zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit zElectrical characteristics (Ta=25°C) −50 −50 −100 150 150 −55 to +150 V V V mA mW V CBO V CEO V EBO I C P C Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Parameter Symbol BV CBO BV CEO BV EBO I CBO I EBO h FE V CE(sat) R f T Min. −50 −50 100 15.4 250 250 −0.5 −0.5 600 −0.3 28.6 − VI C =−50µA I C =−1mA I E =−50µA V CB =−50V V EB =−4V V CE =−5V, I C =−1mA I C B =−5mA/−0.5mA V CE 10V, I E 5mA, f 100MHz V V µA µA V kΩ MHz Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Input resistance Transition frequency ∗ Characteristics of built-in transistor SC-89
LESHAN RADIO COMPANY, LTD. zElectrical characteristic curves LDTA124TET1G DC CURRENT GAIN : h FE COLLECTOR URRENT : I C (A) 500 200 100 V CE =−5V -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m −40°C 25°C Ta=100°C Fig.1 DC current gain vs. collector current 10µ 20µ 50µ -100 µ -200 µ -500 µ -1m -2m -5m - 10m COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (A) 500m 200m 100m 50m 20m 10m -5m -2m -1m I C B =10 −40°C 25°C Ta=100°C Fig.2 Collector-emitter saturation voltage vs. collector current
LESHAN RADIO COMPANY, LTD. LDTA124TET1G NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. SC-89