LDTA123YET1G LRC | Alldatasheet

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zAbsolute maximum ratings (Ta=25°C) Limits Parameter Symbol V CC −50 −12 to +5 −100 −100 150 150 −55 to +150 LDTA123YET1G V V mA mW V IN I O I C(Max.) P D Tj Tstg Unit Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature zElectrical characteristics (Ta=25°C) Parameter Symbol V I(off) V I(on) V O(on) I I I O(off) R G I R f T Min. 1.54 3.6 −0.1 2.2 4.5 250 −0.3 −0.3 −3.8 −0.5 2.86 5.5 V V CC −5V, I O −100µA V O −0.3V, I O −20mA I O I −10mA/−0.5mA V I −5V V CC −50V, V I V O −5V, I O −10mA V CE 10V, I E =5mA, f=100MHz V mA µA kΩ MHz Typ. Max. Unit Conditions Input voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency Characteristics of built-in transistor LDTA123YET1G LDTA123YET3G 2.2 10P8 SC-89

LESHAN RADIO COMPANY, LTD. zElectrical characteristic curves OUTPUT CURRENT : I O (A) 100 500m 200m 100m INPUT VOLTAGE : V I(on) (V) −100µ− 1m −10m −100m V O 0.3 V 100 25°C Ta=−40°C Fig.1 Input voltage vs. output current (ON characteristics) 3.0 OUTPUT CURRENT : I O (A) INPUT VOLTAGE : V I(off) (V) 10m 200µ 500µ 100µ 20µ 50µ 10µ 0.5 1.0 1.5 2.0 2.5 V CC Ta= 100 25°C −40°C Fig.2 Output current vs. input voltage (OFF characteristics) DC CURRENT GAIN : G I OUTPUT CURRENT : I O (A) 500 200 100 −100µ− 1m −10m −100m V O =−5V −40°C 25°C Ta= 100 Fig.3 DC current gain vs. output current OUTPUT VOLTAGE : V O(on) (V) OUTPUT CURRENT : I O (A) −500m −200m −100m −50m −20m −10m −5m −2m −1m I O I =20 −100µ− 1m −10m −100m −40°C 25°C Ta= 100 Fig.4 Output voltage vs. output current LDTA123YET1G

LESHAN RADIO COMPANY, LTD. LDTA123YET1G NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. SC-89