LDTA123EET1G

LDTA114EET1G LRC | Alldatasheet

Document overview

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Technical content

PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. LDTA114EET1G Series

• Simplifies Circuit Design  Reduces Board Space  Reduces Component Count  The SC-89 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. SC-89 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) PIN 1 BASE (INPUT) R R LESHAN RADIO COMPANY, LTD. We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS A = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage V CBO Vdc Collector-Emitter Voltage V CEO Vdc Collector Current I C 100 mAdc THERMAL CHARACTERISTICS Rating Symbol Value Unit Total Device Dissipation, FR−4 Board (Note 1) @ T A = 25°C Derate above 25°C P D 200 1.6 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) R /C0113JA 600 °C/W Total Device Dissipation, FR−4 Board (Note 2) @ T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) R /C0113JA 400 °C/W Junction and Storage Temperature Range T J , T stg −55 to +150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 × 1.0 Inch Pad. Rev.O 1/12

LESHAN RADIO COMPANY, LTD. ORDERING INFORMATION AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Package Shipping LDTA114EET1G SC−89

3000 Tape & Reel

SC−89 SC−89 SC−89 SC−89 4.7 LDTA143TET1G SC−89 2.2 2.2 LDTA123EET1G SC−89 4.7 4.7 LDTA143EET1G SC−89 4.7 LDTA143ZET1G SC−89 SC−89 2.2 LDTA123JET1G SC−89 SC−89 SC−89 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

ELECTRICAL CHARACTERISTICS

A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (V CB = 50 V, I E = 0) I CBO 100 nAdc Collector−Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO 500 nAdc EB = 6.0 V, I C LDTA144EET1G LDTA114YET1G LDTA114TET1G LDTA143TET1G LDTA123EET1G LDTA143EET1G LDTA143ZET1G LDTA124XET1G LDTA123JET1G LDTA115EET1G LDTA144WET1G I EBO 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector−Base Breakdown Voltage (I C = 10 /C0109A, I E = 0) V (BR)CBO Vdc Collector−Emitter Breakdown Voltage (Note 3) C = 2.0 mA, I B = 0) V (BR)CEO Vdc 3. Pulse Test: Pulse Width < 300 /C0109s, Duty Cycle < 2.0% Emitter−Base Cutoff Current LDTA114EET1G = 0) LDTA124EET1G LDTA114EET1G Series Rev.O 2/12

LESHAN RADIO COMPANY, LTD. A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 4) CE = 10 V, I C h FE 160 160 8.0 100 140 140 250 250 140 130 140 150 140 Collector−Emitter Saturation Voltage (I C = 10 mA, I E = 0.3 mA) C = 10 mA, I B C = 10 mA, I B LDTA143ZET1G/LDTA124XET1G LDTA143EET1G V CE(sat) 0.25 Vdc Output Voltage (on) CC = 5.0 V, V B = 2.5 V, R L = 1.0 k/C0087 LDTA114YET1G LDTA114TET1G LDTA143TET1G LDTA123EET1G LDTA143EET1G LDTA143ZET1G LDTA124XET1G LDTA123JET1G CC = 5.0 V, V B = 3.5 V, R L = 1.0 k/C0087 CC = 5.0 V, V B = 5.5 V, R L = 1.0 k/C0087 CC = 5.0 V, V B = 4.0 V, R L = 1.0 k/C0087 V OL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc 4. Pulse Test: Pulse Width < 300 /C0109s, Duty Cycle < 2.0% LDTA144EET1G LDTA114YET1G LDTA114TET1G LDTA143TET1G LDTA123EET1G LDTA143EET1G LDTA143ZET1G LDTA124XET1G LDTA123JET1G LDTA115EET1G LDTA144WET1G LDTA114EET1G LDTA124EET1G DC Current Gain = 5.0 mA) = 1 mA) LDTA114TET1G/LDTA143TET1G = 5 mA) LDTA123EET1G LDTA115EET1G LDTA144WET1G LDTA114EET1G LDTA124EET1G ) LDTA144EET1G Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 k/C0087) CC = 5.0 V, V B = 0.25 V, R L = 1.0 k/C0087) LDTA114TET1G LDTA143TET1G LDTA123EET1G LDTA143EET1G V OH 4.9 Vdc Input Resistor LDTA114EET1G 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 32.9 4.7 2.2 4.7 4.7 2.2 100 28.6 61.1 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 k/C0087 Resistor Ratio LDTA114EET1G/LDTA124EET1G LDTA144EET1G/LDTA115EET1G LDTA114YET1G LDTA114TET1G/LDTA143TET1G LDTA123EET1G/LDTA143EET1G LDTA143ZET1G LDTA124XET1G LDTA123JET1G LDTA144WET1G R 0.8 0.17 0.8 0.055 0.38 0.038 1.7 1.0 0.21 1.0 0.1 0.47 0.047 2.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6 LDTA144EET1G LDTA114YET1G LDTA114TET1G LDTA143TET1G LDTA123EET1G LDTA143EET1G LDTA143ZET1G LDTA124XET1G LDTA123JET1G LDTA115EET1G LDTA144WET1G LDTA124EET1G LDTA114EET1G Series Rev.O 3/12

G M 0.08 (0.003) X D 3 PL J -X- -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. A B Y N 2 PL K C -T- SEATING PLANE DIM A MIN NOM MIN NOM INCHES 1.50 1.60 1.70 0.059 MILLIMETERS B 0.75 0.85 0.95 0.030 C 0.60 0.70 0.80 0.024 D 0.23 0.28 0.33 0.009 G 0.50 BSC H 0.53 REF J 0.10 0.15 0.20 0.004 K 0.30 0.40 0.50 0.012 L 1.10 REF S 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013

0.020 BSC

0.021 REF

0.006 0.008 0.016 0.020

0.043 REF

−−− 10 −−− 10 0.063 0.067 MAX MAX /C0095 /C0095 /C0095 /C0095 M H H L G RECOMMENDED PATTERN OF SOLDER PADS S SC LESHAN RADIO COMPANY, LTD. LDTA114EET1G Series Rev.O 12/12