LDTA113TKT1G LRC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
Applications
zAbsolute maximum ratings (Ta=25°C) Parameter Symbol V CBO V CEO V EBO I C Pc Tj Tstg Limits −50 −50 −5 to +10 −100 200 150 −55 to +150 Unit V V V mA mW Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions R 0.7 1 1.3 kΩ BV CBO −50 −− V BV CEO −50 −− V BV EBO −− V I CBO −0.5 µA I EBO −0.5 µA V CE(sat) − −0.3 V h FE 100 250 600 f T 250 MHz I C −50µA I C −1mA I E −50µA V CB −50V V EB −4V I C I B −5mA / −0.25mA I C −1mA , V CE −5V V CB −10V , I E 5mA , f 100MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Characteristics of built-in transistor SC-89
LESHAN RADIO COMPANY, LTD. zElectrical characteristic curves LDTA113TKT1G 100 200 500 −100µ− 200µ− 500µ− 1m −2m −5m −10m −20m −50m −100m V CE = −5V Fig.1 DC Current gain vs. Collector Current DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (A) Ta=100°C 25°C −40°C −1m −100m −200m −500m −10m −20m −50m −1m −2m −5m −100µ− 200µ− 500µ− 1m −2m −5m −10m −20m −50m −100m I C B =20 Fig.2 Collector-emitter saturation voltage vs. Collector Current COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (A) Ta=100°C 25°C −40°C
LESHAN RADIO COMPANY, LTD. LDTA113TKT1G NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. SC-89