DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
- FEATURES Low RDS(on) trench technology. 2. ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25º C unless otherwise stated) 1.Surface Mounted on 1” x 1” FR4 Board. 2. Repetitive rating, pulse width limited by junction temperature. 3.The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. 4. THERMAL CHARACTERISTICS Unit Limits RθJA Continuous Drain Current LDP4098T1G Dual P-Channel MOSFET Marking Shipping 4098 4000/Tape&Reel We declare that the material of product are Halogen Free and compliance with RoHS requirements. Device LDP4098T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Req uirements; AEC-Q101 Qualified and PPAP Capable. Drain−to−Source Voltage VDSS -30 V Gate−to−Source Voltage VGS ± 20 V Parameter Symbol Limits Power Dissipation(Note 2) Operating Junction Temperature and Storage Temperature Range TJ , TSTG −55 ~+150 W Pulsed Drain Current (Note 3) IDM -25 2.5 A TA =25° C -5.3 ID TA =25° C PD TA =70° C 1.9 -4.2 TA =70° C Typ Parameter Maximum Junction-to-Ambient(Note 1) Symbol Leshan Radio Company, LTD. Rev.A Nov. 2019 Top View Unit
- ELECTRICAL CHARACTERISTICS Drain-Source Breakdown Voltage (ID =-250µ A, VGS =0V) Zero Gate Voltage Drain Current (VDS =-24V, VGS =0V) (VDS =-24V, VGS =0V,TJ = 55° C) Gate-Body Leakage (VDS = 0 V, VGS = ± 20 V) Gate-Source Threshold Voltage (VDS = VGS , ID = 250 uA) On-State Drain Current (VGS =-10V, VDS =-5V) Drain-Source On-Resistance (VGS =-10V, ID =-4.1A) (VGS =-4.5V, ID =-3A) Forward Transconductance (VDS =-5V, ID =-4A) Diode Forward Voltage (IS =-1A,VGS =0V) Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge(10V) Total Gate Charge(4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Body Diode Reverse Recovery Time (IF =-4A, dI/dt=100A/µ s) Body Diode Reverse Recovery Charge (IF =-4A, dI/dt=100A/µ s) BVDSS Symbol Unit Static VGS(th) V -1.4 -2.5 (VGS =0V, VDS =-15V, f=1MHz) Ciss 515 660 725 pF Coss 100 130 Crss 110 Dynamic A Characteristic nA (VGS =-10V, VDS =-15V, RL =3.6 Ω,RGEN =3Ω) td(on) ns tr td(off) tf IGSS ± 100 S RDS(on) mΩ IDSS µA ID(on) gfs Min. Typ. V -0.77 VSD Max. Qg 9.4 V -30 IS A -25 trr Qrr ns nC 11.3 Ω (VGS =-10V, VDS =-15V, ID =-4A) nC 18.7 Gate resistance (VGS =0V, VDS =0V, f=1MHz) Rg 3.5 7.5 11.5 Qgs 2.7 Qg Qgd 3.3 Leshan Radio Company, LTD. Rev.A Nov. 2019
Leshan Radio Company, LTD. LDP4098T1G OUTLINE AND DIMENSIONS SOLDERING FOOTPRINT DIM MIN NOR MAX A 1.75 A1 0.10 0.15 0.20 A2 1.35 1.45 1.55 b 0.33 0.42 0.51 c 0.15 0.22 0.29 D 4.77 4.90 5.03 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e L 0.46 0.66 0.86 L1 0.85 1.05 1.25 θ0 º 5 º 8 º B 0.55 H 0 0.05 0.10 All Dimensions in mm SOP8 1.27BSC DIM (mm) X 0.60 Y 1.55 C1 5.40 C2 1.27 SOP8 Rev.A Nov. 2019