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  1. FEATURES VDS = -30V We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25º C) Junction and Storage Temperature Range 4. THERMAL CHARACTERISTICS 1.Repetitive rating, pulse width limited by junction temperature. Limits Unit Drain–Source Voltage VDSS -30 V Gate–to–Source Voltage VGS ± 20 V -3.5 A Ta=70 -2.5 Pulsed Drain Current (Note 1) IDM -15 Power Dissipation Ta=25 PD Device LDP3407T1G P-Channel Enhancement-Mode MOSFET Marking Shipping LDP3407T1G A07 3000/Tape&Reel 0.55 W Ta=70 0.35 Tj,Tstg -55~+150 Parameter Symbol Continuous Drain Current Ta=25 ID SOT23-6 S-LDP3407T1G 2. Surface Mounted on 1 in FR4 Board with 2oz copper, t 10 s. Parameter Thermal Resistance,Junction-to-Ambient (Note 2)\` Symbol Limits Unit RθJA Thermal Resistance,Junction-to-Ambient (Steady State) RθJA 210 IAS Avalanche Current(L=0.1mH) A Avalanche energy(L=0.1mH) EAS mJ 4.05 Leshan Radio Company, LTD. Rev.B Jul. 2020
  1. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC Drain–Source Breakdown Voltage (VGS = 0, ID = -250μA) Zero Gate Voltage Drain Current (VGS = 0, VDS = -24 V) Gate Leakage Current (VDS =0V, VGS =± 20V) Gate Threshold Voltage (VDS = VGS, ID = -250μA) Static Drain–Source On–State Resistance (VGS =-10V, ID =-4A) (VGS =-4.5V, ID =-3A) Forward Voltage (VGS = 0 V, IS = -1A) Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Gate resistance (VGS =0V, VDS =0V, f=1MHz) Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time V nA μA Qgd 165 Symbol Min. -30 VGS(th) -1.5 IDSS ± 100 IGSS Unit V -0.7 1.25 VSD nC td(off) VBRDSS Characteristic STATIC Max. Typ. Ciss Coss 481 120 V -1.3 DYNAMIC (VDS = -15V, RL= 3.6 Ω,VGS = -10V,RG = 3Ω) tf td(on) tr ns Qg(4.5V) Qg(10V) (VGS =-10V, VDS =-15V, ID =-4A) 7.6 Qgs 1.27 pF Crss 3.7 RDS(on) mΩ Rg Leshan Radio Company, LTD. LDP3407T1G,S-LDP3407T1G P-Channel Enhancement-Mo d e MOSFET 3.6 10.4 19.6 Ω Rev.B Jul. 2020

LDP3407T1G,S-LDP3407T1G P-Channel Enhancement-Mo d e MOSFET .ELECTRICAL CHARACTERISTICS CURVES Leshan Radio Company, LTD. 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 RDS(on) (Ω) ID(A) VGS=10V VGS=4.5V 0.001 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 IS(A) VSD(V) 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ID(A) VGS(V) VDS=10V 150 ID(A) VDS(V) VGS=2.2V VGS=2.4V VGS=2.6V VGS=2.8V VGS=3.0V VGS=5.0V,10V ID vs. VDS ID vs. VGS IS vs. VSD RDS(on) vs. ID Rev.B Jul. 2020

LDP3407T1G,S-LDP3407T1G P-Channel Enhancement-Mo d e MOSFET .ELECTRICAL CHARACTERISTICS CURVES(Con.) Leshan Radio Company, LTD. 100 200 300 400 500 600 700 Capacitance(pF) VDS(V) f=1.0MHz Ta=25 Coss Crss Ciss 1.0 1.2 1.4 1.6 1.8 -50 -25 100 125 150 VGSth(V) Tj( ID=250uA 0.0 0.1 0.2 0.3 0.4 RDS(on) (Ω) VGS(V) ID=4.0A 150 0.02 0.04 0.06 0.08 0.10 0.12 0.14 -50 -25 100 125 150 RDS(on) (Ω) Tj( VGVS=10V,ID=4.0A VGVS=4.5V,ID=3.0A RDS(on) vs. VGS RDS(on) vs. Tj VGSth vs. Tj Capacitance Rev.B Jul. 2020

7.OUTLINE AND DIMENSIONS 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. DIM MIN NOR MAX A 0.90 1.00 1.10 0.01 0.06 0.10 b 0.25 0.40 0.50 c 0.10 0.17 0.26 D 2.80 2.90 3.10 E 1.30 1.60 1.70 e 0.85 0.95 1.05 1.80 1.90 2.00 L 0.20 0.40 0.60 H E 2.50 2.80 3.00 θ 10º SOT23 0.60REF DIM (mm) X 0.70 Y 0.90 A 2.40 B 0.95 C 0.95 SOT23 LDP3407T1G,S-LDP3407T1G P-Channel Enhancement-Mo d e MOSFET Rev.B Jul. 2020