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  1. FEATURES VDS = -20V RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ RDS(ON),VGS@-2.5V,IDS@-1.0A= 0mΩ We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ESD rating of class 0 (<100V)per Human Body Model 2. APPLICATIONS Advanced trench process technology High density cell design for ultra low on-resistance. 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) – Continuous TA = 25°C – Pulsed (Note 1) 5. THERMAL CHARACTERISTICS Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 2.1-in² 2oz Cu PCB board. º C/W º C Parameter Symbol Limits W PD −55 +150 TJ,Tstg RΘJA 110 ID -4.7 IDM -20 Parameter Symbol Limits Device Gate–to–Source Voltage – Continuous VGS ± 12 LDP2010DT1G S-LDP2010DT1G 20V P-Channel Enhancement-Mode MOSFET -20 Unit Drain–Source Voltage VDSS Marking Shipping LDP2010DT1G P14 4000/Tape&Reel Drain Current V V A Unit 1.1 DFN2020-6D Leshan Radio Company, LTD. Rev.G Jul. 2020

LDP2010DT1G, S-LDP2010DT1G 20V P-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = -250μA) Zero Gate Voltage Drain Current (VGS = 0, VDS = -20 V) Gate–Body Leakage Current, Forward (VGS = 12 V) Gate–Body Leakage Current, Reverse (VGS = - 12 V) Gate Threshold Voltage (VDS = VGS, ID = -250μA) Static Drain–Source On–State Resistance (VGS = -4.5V, ID = -4.7A) (VGS = -2.7V, ID = -3.8A) (VGS = -2.5V, ID = -1.0A) VGS(th) IDSS V Typ. Max. IGSSR IGSSF 100 VBRDSS -1.4 Unit V mΩ -0.85 RDS(on) -0.6 Symbol Min. -100 -20 μA nA nA Leshan Radio Company, LTD. Static Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Resistance (VDS = 0 V, VGS = 0 V, f = 1 MHz) Source-Drain DIODE Ratings and Characteristics(TA= 25° C) Reverse Recovery Time (IF=-0.9A, di/dt=13A/µs) Reverse Recovery Charge (IF=-0.9A, di/dt=13A/µs) 3.Pulse test: PW 300us duty cycle 2%. trr Qrr nS nC Rg Ω (VDS=-10 V, VGS=0 V, f=1MHz) td(on) tr td(off) tf pF Dynamic(Note 4) nS Qgs Qgd (VDS = -10 V, VGS = -4.5 V,ID = -1 A) nC (VDS=-10V, ID=-1A,V GEN =-4.5V,RG= 102 Ciss Coss Crss Qg 1.1 7.5 6.6 6.2 4.Guaranteed by design, not subject to production testing. 800 0.5 Rev.G Jul. 2020

LDP2010DT1G, S-LDP2010DT1G 20V P-Channel Enhancement-Mode MOSFET ELECTRICAL CHARACTERISTICS CURVES ID Drain Current(A) VDS Drain to Source Voltage(V) VGS=1.5V VGS=1.6V VGS=1.7V VGS=1.8V VGS=1.9V,2V,2.5V,3V 0.005 0.05 0.5 0.2 0.4 0.6 0.8 1.0 IS Diode Forward Current(A) VSD Diode Forward Voltage(V) 150 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 RDS(on) On Resistance(Ω) ID,Drain Current(A) VGS=2.5V VGS=4.5V VGS=2.7V 0.0 0.5 1.0 1.5 2.0 ID Drain Current(A) VGS,Gate to Source Voltage(V) VDS=6V 150 IS vs. VSD ID vs. VDS ID vs. VGS RDS(on) vs. ID Leshan Radio Company, LTD. Rev.G Jul. 2020

LDP2010DT1G, S-LDP2010DT1G 20V P-Channel Enhancement-Mode MOSFET ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 RDS(on) On Reistance(Ω) VGS,Gate to Source Voltage(V) ID=4.7A 150 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 100 125 150 VGSTH Threshold Voltage(V) Tj Temperature( ID=250uA 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 -50 -25 100 125 150 RDS(on) On Resistance (Ω) Tj Temperature( VGS=2.7V,ID=3.8A VGS=4.5V,ID=4.7A VGSTH vs. Tj RDS(on) vs. VGS RDS(on) vs. Tj Leshan Radio Company, LTD. 0.01 0.1 100 0.1 100 ID(A) VDS(V) 10µ s 100µ s 1ms 10ms 100ms DC result Max Voltage Safe Operating Area Rev.G Jul. 2020

LDP2010DT1G, S-LDP2010DT1G 20V P-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. (Unit:mm) DFN20 20 6D TOP VIEW S I D E V I EW B O T T O M V I EW DFN20 20 6D Dim Min Typ Max D 1.9 2.0 2.05 E 1.9 2.0 2.05 e 0.65 L 0.2 0.2 0.30 b 0.2 0.3 0.35 A 0.70 D E b L e A 0.60 0.05 0.15 0.9 1.0 1.05 0.6 0.7 0.75 0.02 0.65 d d 1.00 All Dimensions in mm DFN20 20 6D Dimensions (mm) X Y Z Y X C G C Z G Rev.G Jul. 2020