DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
- FEATURES VDS= 20V RDS(ON), VGS@4.5V, IDS@5.0A = 4mΩ RDS(ON), VGS@2.5V, IDS@2.0A = mΩ We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. APPLICATIONS Li Battery 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) – Continuous TA = 25°C – Pulsed(Note 1) 5. THERMAL CHARACTERISTICS Maximum Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation. 2. 1-in² 2oz Cu PCB board. TJ,Tstg RΘJA Device Gate–to–Source Voltage – Continuous VGS ± 12 Parameter Symbol Limits LDN8000DT1AG 20V N-Channel Enhancement-Mode MOSFET Unit Drain–Source Voltage VDSS Marking Shipping LDN8000DT1AG 3000/Tape&Reel Drain Current V V A Unit ID IDM Parameter Symbol Limits W PD −55 +150 º C/W º C Leshan Radio Company, LTD. Rev.O May. 2019 S1 S1 S1 G1 S2 S2 S2 G2 D1/D2 DFN3030-8D
20V N-Channel Enhancement-Mode MOSFET Leshan Radio Company, LTD. 6. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC OFF CHARACTERISTICS Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = 250μA) Zero Gate Voltage Drain Current (VDS=20V, VGS=0V) Gate–Body Leakage Current, Forward (VDS = 0 V, VGS = 8 V) Gate–Body Leakage Current, Reverse (VDS = 0 V, VGS = -8 V) Forward Transconductance (VDS = 5.0 V, ID = 5 A) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = 250μA) Static Drain–Source On–State Resistance (VGS = 4 V, ID =4 A) (VGS = 4.5 V, ID =5 A) (VGS = 2.5 V, ID = 2 A) SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE–DRAIN DIODE CHARACTERISTICS Forward Voltage (VGS = 0 V, ISD = 1 A) Max.Diode Forward Current 3.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%. 2.5 IS A Symbol Min. RDS(on) 0.5 Max. IGSSR Unit V td(on) tr (VDD = 15V, RL = 2.7Ω ΙD = 1Α, VGEN = 10V,RG = 3Ω ) Typ. -10 V(BR)DSS IDSS μA IGSSF 3.6 4.5 mΩ 3.4 gfs S tf VGS(th) V 1.1 3.8 ns td(off) VSD V 1.3 (VGS = 3.1 V, ID = 4 A) LDN8000DT1AG μA μA Rev.O May. 2019
20V N-Channel Enhancement-Mode MOSFET 7.OUTLINE AND DIMENSIONS 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. LDN8000DT1AG DFN3030-8D C X Y Dimen sions C 0.65 X 0.35 Y 0.60 1.60 2.10 2.40 DFN3030-8D TOP VIEW SIDE VIEW BOTTOM VIEW DFN3030-8D Di m Min Typ Max A 0.35 0.25 0.3 0.4 0.45 L 0.30 All Dimensions in mm E D L b e A 0.6 0.6 0.70 0.05 0.02 0.152REF. 2.3 2.35 1.4 1.50 1.55 2.25 b k e 0.35TYP. 0.65TYP. D E 2.9 3.0 3.05 2.9 3.0 3.05 k Rev.O May. 2019