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Technical content

Dual N-Channel 40-V (D-S) MOSFET V DS (V) I D (A) Symbol Limit Units V DS V GS ±20 T A =25°C T A =70°C I DM I S 4.6 A T A =25°C T A =70°C T J , T stg -55 to 150 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Power Dissipation a I D A P D W Gate-Source Voltage PRODUCT SUMMARY r DS(on) (mΩ) 12 @ V GS = 10V 16 @ V GS = 4.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Continuous Drain Current a Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters DC/DC Conversion Circuits LDN4818T1G

ORDERING INFORMATION

4000/Tape&Reel Device LDN4818T1G Motor Drives SO Leshan Radio Company, LTD. Symbol Maximum Units 110 t <= 10 sec Steady State R θJA THERMAL RESISTANCE RATINGS °C/W Parameter Maximum Junction-to-Ambient a 1.9 1.1 4818 Rev.A Nov. 2019

Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 uA V Gate-Body Leakage I GSS V DS = 0 V, V GS = ±20 V ±100 nA V DS = 32 V, V GS = 0 V V DS = 32 V, V GS = 0 V, T J = 55°C On-State Drain Current a I D(on) V DS = 5 V, V GS = 10 V 20.7 A V GS = 10 V, I D = 11 A V GS = 4.5 V, I D = 8.8 A Forward Transconductance a g fs V DS = 15 V, I D = 11 A S Diode Forward Voltage a V SD I S = 2.3 A, V GS = 0 V 0.74 V Total Gate Charge Q g Gate-Source Charge Q gs 5.6 Gate-Drain Charge Q gd 9.6 Turn-On Delay Time t d(on) Rise Time t r Turn-Off Delay Time t d(off) Fall Time t f Input Capacitance C iss 737 Output Capacitance C oss Reverse Transfer Capacitance C rss Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. pF V DS = 15 V, V GS = 0 V, f = 1 MHz mΩ r DS(on) nC V DS = 20 V, R L = 1.9 Ω, I D = 11 A, V GEN = 10 V, R GEN = 6 Ω V DS = 20 V, V GS = 4.5 V, I D = 11 A Drain-Source On-Resistance a Zero Gate Voltage Drain Current Static uA

Electrical Characteristics

I DSS Dynamic b ns N-Channel 40-V (D-S) MOSFET 9.5 Leshan Radio Company, LTD. Rev.A Nov. 2019 2/3 LDN4818T1G

A 1.75 A1 0.10 0.15 0.20 A2 1.35 1.45 1.55 b 0.33 0.42 0.51 c 0.15 0.22 0.29 D 4.77 4.90 5.03 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e L 0.46 0.66 0.86 L1 0.85 1.05 1.25 θ0 º 5 º 8 º B 0.55 H 0 0.05 0.10 All Dimensions in mm SOP8 1.27BSC DIM (mm) X 0.60 Y 1.55 C1 5.40 C2 1.27 SOP8 Leshan Radio Company, LTD. Rev.A Nov. 2019 N-Channel 40-V (D-S) MOSFET LDN4818T1G