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Technical content
Dual N-Channel 30-V (D-S) MOSFET V DS (V) I D (A) Symbol Limit Units V DS V GS ±20 T A =25°C T A =70°C I DM I S 1.4 A T A =25°C 1.9 T A =70°C 1.1 T J , T stg -55 to 150 Symbol Maximum Units 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Power Dissipation a t <= 10 sec Steady State R θJA I D A P D W Continuous Drain Current a Gate-Source Voltage PRODUCT SUMMARY r DS(on) (mΩ) 26 @ V GS = 10V 34 @ V GS = 4.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: DC/DC Conversion Power Routing Motor Drives SO LDN4330T1G Leshan Radio Company, LTD.
ORDERING INFORMATION
4000/Tape&Reel Device LDN4330T1G Rev.A Nov. 2019
Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 uA V Gate-Body Leakage I GSS V DS = 0 V, V GS = ±20 V ±10 uA V DS = 24 V, V GS = 0 V V DS = 24 V, V GS = 0 V, T J = 55°C On-State Drain Current a I D(on) V DS = 5 V, V GS = 10 V A V GS = 10 V, I D = 6 A V GS = 4.5 V, I D = 5 A Forward Transconductance a g fs V DS = 15 V, I D = 10 A S Diode Forward Voltage a V SD I S = 1.5 A, V GS = 0 V 0.76 V Total Gate Charge Q g Gate-Source Charge Q gs 1.9 Gate-Drain Charge Q gd 2.0 Turn-On Delay Time t d(on) Rise Time t r Turn-Off Delay Time t d(off) Fall Time t f Input Capacitance C iss 360 Output Capacitance C oss Reverse Transfer Capacitance C rss 4\`6 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. pF V DS = 15 V, V GS = 0 V, f = 1 Mhz mΩ r DS(on) nC V DS = 15 V, R L = 1.5 Ω, I D = 10 A, V GEN = 10 V, R GEN = 6 Ω V DS = 15 V, V GS = 4.5 V, I D = 10 A Drain-Source On-Resistance a Zero Gate Voltage Drain Current Static uA
Electrical Characteristics
I DSS Dynamic b ns RDS(on) On Resistance( Leshan Radio Company, LTD. LDN4330T1G Rev.A Nov. 2019
Typical Electrical Characteristics Leshan Radio Company, LTD. LDN4330T1G On-Resistance vs. Drain Current Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage Drain-to-Source Forward Voltage Output Characteristics Capacitance 0.02 0.04 0.06 0.08 0.1 RDS(on) On Resistance( ID Drain Current (A) 3.5V 4V,.5V,6V,8V,10V 0.1 0.2 0.3 0.4 0.5 0.6 ID Drain Current (A) VDS Drain to Source Voltage (V) 10V,8V,6V, 4.5V,4V 3.5V 0.04 0.08 0.12 0.16 0.2 RDS(on) On Resistance( VGS Gate to Source Voltage (V) TJ = 25 C TJ = 25 C ID Drain Current (A) VGS Gate to Source Voltage (V) TJ = 25 C 0.01 0.1 100 0.2 0.4 0.6 0.8 1.2 1.4 1.6 IS Source Current (A) VSD Source to Drain Voltage (V) TJ = 25 C 100 200 300 400 500 600 Capacitance (pf) VDS Drain to Source Voltage (V) Ciss Coss Crss F = 1MHz ID = 8.2A Rev.A Nov. 2019
Typical Electrical Characteristics Leshan Radio Company, LTD. LDN4330T1G Gate Charge Safe Operating Area Single Pulse Maximum Power Dissipation Normalized On-Resistance Vs Junction Temperature Normalized Thermal Transient Junction to Ambient VGS Gate to Source Voltage (V) Qg Total Gate Charge (nC) 0.01 0.1 100 1000 0.1 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 0.001 0.01 0.1 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t1 TIME (sec) D = 0.5 0.2 0.1 0.05 0.02 Single Pulse R θ JA (t) = r(t) + R θ JA T J T A = P * R θ JA (t) Duty Cycle, D = t / t 0.5 1.5 -50 -25 100 125 150 RDS(on) On Resistance( (Normalized) TJ JunctionTemperature( P(pk) t t R θ JA = 81 C / W VDS = 15V ID = 8.2A 10uS 100uS 1000uS Rev.A Nov. 2019
A 1.75 A1 0.10 0.15 0.20 A2 1.35 1.45 1.55 b 0.33 0.42 0.51 c 0.15 0.22 0.29 D 4.77 4.90 5.03 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e L 0.46 0.66 0.86 L1 0.85 1.05 1.25 θ0 º 5 º 8 º B 0.55 H 0 0.05 0.10 All Dimensions in mm SOP8 1.27BSC DIM (mm) X 0.60 Y 1.55 C1 5.40 C2 1.27 SOP8 Leshan Radio Company, LTD. LDN4330T1G Rev.A Nov. 2019