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- FEATURES VDS= 20V RDS(ON), VGS@4.5V, IDS@6.0A = 11.5mΩ RDS(ON), VGS@2.5V, IDS@3.0A = mΩ We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. APPLICATIONS Li Battery 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) – Continuous TA = 25°C – Pulsed(Note 1) 5. THERMAL CHARACTERISTICS Maximum Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation. 2. 1-in² 2oz Cu PCB board. TJ,Tstg RΘJA 110 Device Gate–to–Source Voltage – Continuous VGS ± 12 Parameter Symbol Limits LDN2012DT2AG 20V N-Channel Enhancement-Mode MOSFET Unit Drain–Source Voltage VDSS Marking Shipping LDN2012DT2AG 4000/Tape&Reel Drain Current V V A Unit 1.2 ID IDM Parameter Symbol Limits W PD −55 +150 º C/W º C Leshan Radio Company, LTD. D1/D2 DFN2030-6A Gate Protection Diode Gate Protection Diode Top View Pin Configuration G2 S2 S2 G1 S1 S1 Bottom Drain Contact D1/D2 Rev.A Dec. 2019
20V N-Channel Enhancement-Mode MOSFET Leshan Radio Company, LTD. 6. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = 250μA) Zero Gate Voltage Drain Current (VDS=16V, VGS=0V) Gate–Body Leakage Current, Forward (VDS = 0 V, VGS = 8 V) Gate–Body Leakage Current, Reverse (VDS = 0 V, VGS = -8 V) Forward Transconductance (VDS = 5.0 V, ID = 5 A) Gate Threshold Voltage (VDS = VGS, ID = 250μA) Static Drain–Source On–State Resistance (VGS = 4 V, ID =6 A) (VGS = 4.5 V, ID =6 A) (VGS = 2.5 V, ID = 3 A) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Forward Voltage (VGS = 0 V, ISD = 3 A) Max.Diode Forward Current 3.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%. 2.5 IS A Symbol Min. RDS(on) 0.5 Max. IGSSR Unit V td(on) tr 13.5 (VDD = 15V, RL = 2.7Ω ΙD = 1Α, VGEN = 10V,RG = 3Ω ) Typ. -10 V(BR)DSS IDSS μA IGSSF mΩ 8.5 11.5 gfs S tf VGS(th) V 1.1 10.5 ns td(off) VSD V 1.2 (VGS = 3.1 V, ID = 3 A) LDN2012DT2AG μA μA Gate-Resistance (VGS = 0 V, VDS=0V,f=1MHz) Rg 1210 Ω Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 10 V, VGS = 4.5 V,ID = 6A) Qgs 1.3 Qgd 4.7 Qg 13.5 nC Static Dynamic Rev.A Dec. 2019
7.ELECTRICAL CHARACTERISTICS CURVES ID(A) VDS(V) VGS=1.1V VGS=1.2V VGS=1.3V VGS=1.4V VGS=1.5V VGS=2V,3V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID(A) VGS(V) VDS=10V 150 0.01 0.1 0.2 0.4 0.6 0.8 1.0 IS(A) VSD(V) 150 0.008 0.009 0.010 0.011 0.012 0.013 0.014 RDS(on) (Ω) ID(A) VGS=2.5V VGS=3.1V VGS=4.0V VGS=4.5V ID vs. VDS ID vs. VGS IS vs. VSD RDS(on) vs. ID 20V N-Channel Enhancement-Mode MOSFET Leshan Radio Company, LTD. LDN2012DT2AG Rev.A Dec. 2019
7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 RDS(on) (Ω) VGS(V) ID=6.0A 150 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 -50 -25 100 125 150 RDS(on) (Ω) Tj( VGS=3.1V,ID=3.0A VGS=4.5V,ID=6.0A 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -50 -25 100 125 150 VGSth(V) Tj( ID=250uA 200 400 600 800 1000 Capacitance(pF) VDS(V) f=1.0MHz Ta=25 Ciss Crss Coss RDS(on) vs. VGS RDS(on) vs. Tj VGSth vs. Tj Capacitance 20V N-Channel Enhancement-Mode MOSFET Leshan Radio Company, LTD. LDN2012DT2AG Rev.A Dec. 2019
8.OUTLINE AND DIMENSIONS 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Dec. 2019 DFN2030-6A TOP VIEW SIDE VIEW BOTTOM VIEW DFN2030-6A D im M in T yp M ax A D E T Y k e All Dimens ions in mm E D A k L R E T Y b e b L Dimen sions C 0.50 1.62 Y 0.55 1.80 2.20 C X Y X 0.30 20V N-Channel Enhancement-Mode MOSFET LDN2012DT2AG