LDAN222T1 LRC | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low power surface mount applications, where board space is at a premium.
- Fast trr
- Low CD
- Available in 8 mm Tape and Reel MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Reverse Voltage VR Vdc Peak Reverse Voltage VRM Vdc Forward Current IF 100 mAdc Peak Forward Current IFM 300 mAdc Peak Forward Surge Current IFSM(1) 2.0 Adc THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 Storage Temperature Range Tstg –55 to +150 1. t = 1 µS ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V 0.1 µAdc Forward Voltage VF IF = 100 mA 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 µA Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz 3.5 pF Reverse Recovery Time trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR 4.0 ns 2. trr Test Circuit on following page. LDAN222T1=N9 Driver Marking LDAN222T1-1/3 SC-89 LDAN222T1 CATHODE ANODE ANODE Common Cathode Silicon Dual Switching Diode
NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. LDAN222T1 SC-89 LDAN222T1-3/3