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Quantum Semiconductor International Co., Ltd 2004. Rev 1. ♦ OVERVIEW LD68I6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for opto-electronic devices such as Industrials. ♦ APPLICATION Industrials Laser Module ♦ FEATURES Visible Light Output : λp = 685nm Optical Power Output : 30 mW CW Package Type : TO-18 (5.6mmφ) Built-in Photo Diode for Monitoring Laser Output ♦ ELECTRICAL CONNECTION A LD cathod, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathod (Fig. 3) noitarugifnoC niP weiV mottoB Fig. 2 LD68I6SB Fig. 1 LD68I6SA Fig. 3 LD68I6SC
♦ ABSOLUTE MAXIMUM RATING at Tc=25 Items Symbols Values Unit Optical Output Power P 35 mW Laser Diode Reverse Voltage V 2 V Photo Diode Reverse Voltage V 03 V Operating Temperature Topr -10 +60 °C Storage Temperature Tstg -40 +85 °C ♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25 Items Symbols Min. Typ. Max. Unit Condition Optical Output Power Po - 30 - mW - Threshold Current Ith - 35 60 mA - Operating Current Iop - 80 140 mA Po=30mW Operating Voltage Vop 2 2.4 3 V Po=30mW Lasing Wavelength λ p 670 685 700 nm Po=30mW θ II 7 9.5 12 deg Po=30mW Beam Divergence θ ⊥ 16 20 25 deg Po=30mW ∆ θ II - - 2.0 deg Po=30mW Beam Angle ∆ θ ⊥ - - 2.5 deg Po=30mW Monitor Current Im 0.05 0.2 2.5 mA Po=30mW Astigmatism - - 8 µm Optical Distance ∆X, ∆Y, ∆Z - - 60 µm NOTICE : LD68I6S-A/B/C to be operated on APC circuit The above product specification are subject to change without notice
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