LD65F7S-A SENSORTECHNICS | Alldatasheet
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Quantum Semiconductor International Co., Ltd. ♦OVERVIEW LD65F7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW and low operating current for optoelectronic devices such as Optical Pick-up & Bar Code Reader. ♦APPLICATION - Optical Pick-up - Laser Module - Bar Code Reader ♦FEATURES - Visible Light Output : λp = 650 nm - Optical Power Output : 10mW CW - Package Type : TO -18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Bottom View Pin Configuration Fig. 2 LD65F7SB Fig. 1 LD65F7SA Fig. 3 LD65F7SC Ver. 1 JAN. 2004
♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Symbols Values Unit Optical Output Power P 12 mW Laser Diode Reverse Voltage V 2 V Photo Diode Reverse Voltage V 30 V Operating Temperature Topr −10 ~ +70 °C Storage Temperature Tstg −40 ~ +85 °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Symbols Min. Typ. Max. Unit Condition Optical Output Power Po - 10 - mW - Threshold Current Ith - 40 50 mA - Operating Current Iop - 60 80 mA Po=10mW Operating Voltage Vop - 2.3 2.6 V Po=10mW Lasing Wavelength λp 645 655 660 nm Po=10mW θ || 6 9 12 deg Po=10mW Beam Divergence θ ⊥ 20 25 30 deg Po=10mW ∆θ || - - ±1.5 deg Po=10mW Beam Angle ∆θ ⊥ - - ±2.5 deg Po=10mW Monitor Current Im 0.1 0.2 0.5 mA Po=10mW Optical Distance ∆X, ∆Y, ∆Z - - ±60 µm - The above product specifications are subject to change without notice. NOTICE : LD65F7S-A/B/C to be operated on APC
♦EXAMPLE of REPRESENTATIVE CHARACTERISTICS
♦PACKAGE DIMENSION
♦PACKING Germany sales.opto International Sales First Sensor AG Peter-Behrens-Str. 15
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@first-sensor.com www.first-sensor.com US Sales First Sensor Inc.
5700 Corsa Avenue #105
Westlake Village, CA 91362 USA T +1 818 7063 400 F +1 818 8897 053 sales.us@first-sensor.com www.first-sensor.com