LD63D4S-A SENSORTECHNICS | Alldatasheet

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Quantum Semiconductor International Co., Ltd. ♦♦ ♦♦ OVERVIEW LD63D4S- A / B / C -is ,a ,MOCVD ,grown ,635nm ,band ,I nG aAlP ,laser ,diode ,with ,quantum ,well ,structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Optical Leveler and Modules. ♦♦♦♦ APPLICATION - Laser Pointer - Bar Code Reader - Laser Module ♦♦ ♦♦ FEATURES - Visible Light Output : λ p = 635 nm - Optical Power Output : 5mW CW - Package Type : TO-18 (5.6mmφ ) - Built-in Photo Diode for Monitoring Laser Diode ♦♦ ♦♦ ELECTRICAL CONNECTION A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Bottom View Pin Configuration Fig. 2 LD63D4SB Fig. 1 LD63D4SA Fig. 3 LD63D4SC Ver. 4 MAR. 2011 www.first-sensor.com

♦♦ ♦♦ ABSOLUTE MAXIMUM RATING at Tc=25°° °°C Items Symbols Values Unit Optical Output Power P 6 mW Laser Diode Reverse Voltage V 2 V Photo Diode Reverse Voltage V 30 V Operating Temperature Topr − 10 ~ +40 °C Storage Temperature Tstg − 40 ~ +85 °C ♦♦ ♦♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°° °°C Items Symbols Min. Typ. Max. Unit Condition Optical Output Power Po - 5 - mW - Threshold Current Ith - 24 35 mA - Operating Current Iop - 32 45 mA Po=5mW Operating Voltage Vop - 2.2 2.7 V Po=5mW Lasing Wavelength λ p 630 637 640 nm Po=5mW Beam Divergence θ  6 8 12 deg Po=5mW θ ⊥ 28 35 40 deg Po=5mW Beam Angle ∆θ  - - ±2.0 deg Po=5mW ∆θ ⊥ - - ±3.0 deg Po=5mW Monitor Current Im 0.05 0.2 0.4 mA Po=5mW Optical Distance ∆ X, ∆ Y, ∆ Z - - ±60 µ m - The above product specifications are subject to change without notice. NOTICE - : - LD63D4S-A/B/C -to -be -operated -on - APC www.first-sensor.com

♦♦ ♦♦ EXAMPLE of PEPRESENTATIVE CHARACTERISTICS www.first-sensor.com

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♦♦ ♦♦ PACKAGE DIMENSION www.first-sensor.com

♦♦ ♦♦ PACKING www.first-sensor.com