LD263

LD260 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

• GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process
• High reliability
• Same package as BPX 80 series

Applications

• Miniature photointerrupters
• Punched tape-readers
• Industrial electronics
• For control and drive circuits LD 260 LD 262 ... LD 269 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. fez06365feo06367 GEO06367 7.4 7.0 0.7 0.6 Collector (BPX 83) Cathode (LD 263) 2.54 mm spacing 1.5 2.1 2.7 2.5 3.2 3.6 3.0 3.5 1.9 1.7 position Chip 0.25 0.150 ... 5 1.4 1.0 A 0.4 0.4 0.5 A

Semiconductor Group 2 1997-11-01 LD 260 LD 262 ... LD 269 Grenzwerte (TA = 25°C) Maximum Ratings Typ Type IRED pro Zeile per Row Maß “A” Dimension “A” Bestellnummer Ordering Code Gehäuse Package min. max. LD 262 2 4.5 4.9 Q62703-Q70 Zeilenbauform, Leiterbandgehäuse, klares Epoxy-Gießharz, linsenförmig, Anschlüsse im 2.54-mm-Raster ( 1/10’’), Kathodenkennzeichnung: Nase am Lötspieß Lead frame arrays, transparent epoxy resin lens, solder tabs, lead spacing 2.54 mm ( 1/10’’), cathode marking: projection at solder lead LD 263 3 7 7.4 Q62703-Q71 LD 264 4 9.6 10 Q62703-Q72 LD 265 5 12.1 12.5 Q62703-Q73 LD 266 6 14.6 15 Q62703-Q74 LD 267 7 17.2 17.6 Q62703-Q75 LD 268 8 19.7 20.1 Q62703-Q76 LD 269 9 22.3 22.7 Q62703-Q77 LD 260 10 24.8 25.2 Q62703-Q78 Bezeichnung

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 40 ... + 80 °C Sperrschichttemperatur Junction temperature Tj 80 °C Sperrspannung Reverse voltage VR 5V Durchlaßstrom Forward current IF 50 mA Stoßstrom,τ≤ 10 µs,D = 0 Surge current IFSM 1.6 A Verlustleistung Power dissipation Ptot 70 mW Wärmewiderstand Thermal resistance RthJA RthJL 750 650 K/W K/W

LD 262 ... LD 269 Semiconductor Group 3 1997-11-01 Kennwerte (TA = 25°C) Characteristics Bezeichnung Wellenlänge der Strahlung Wavelength at peak emission IF = 50 mA,tp = 20 ms λpeak 950 nm Spektrale Bandbreite bei 50 % vonImax Spectral bandwidth at 50 % of Imax IF = 50 m A,tp = 20 ms Δλ 55 nm Abstrahlwinkel Half angle ϕ± 15 Grad deg. Aktive Chipfläche Active chip area A 0.25 mm 2 Abmessungen der aktive Chipfläche Dimension of the active chip area L × B L × W 0.5× 0.5 mm Abstand Chipoberfläche bis Linsenscheitel Distance chip surface to lens top Schaltzeiten,Ie von 10 % auf 90 % und von 90 % auf 10%, beiIF = 50 mA,RL = 50Ω Switching times,Ie from 10 % to 90 % and from 90 % to 10 %,IF = 50 mA,RL = 50Ω tr,tf 1 µs Kapazität,VR = 0 V Capacitance C o 40 pF Durchlaßspannung,IF = 50 mA,tp = 20µs Forward voltage VF 1.25(≤ 1.4) V Sperrstrom, VR = 5 V Reverse current IR 0.01 (≤1)µ A Gesamtstrahlungsfluß,IF = 50 mA,tp = 20 ms Total radiant flux Φ e 9m W Temperaturkoeffizient vonIe bzw.Φ e, IF = 50 mA Temperature coefficient ofIe orΦ e, IF = 50 mA TC I – 0.55 %/K Temperaturkoeffizient vonVF,IF = 50 mA Temperature coefficient of VF,IF = 50 mA TC V – 1.5 mV/K Temperaturkoeffizient vonλpeak,IF = 50 mA Temperature coefficient ofλpeak,IF = 50 mA TC λ 0.3 nm/K Strahlstärke,IF = 50 mA,tp = 20 ms Radiant intensity Ie typ. 5 (≥ 2.5) mW/sr

Semiconductor Group 4 1997-11-01 LD 260 LD 262 ... LD 269 Relative spectral emission Irel= f(λ) Forward current IF = f(VE), single pulse,tp = 20µs OHRD1938 λ relΙ 880 920 960 1000 nm 1060 100 V OHR01042 F FΙ 110 010 -110 10 -2 A 1.5 2 2.5 3 3.5 4 V 4.5 max.typ. Radiant intensity Single pulse,tp = 20µs Permissible pulse handling capability IF = f(τ),TC = 25°C, duty cycleD = parameter Ie Ie 100 mA =f(IF) Ι OHR01039 F -110 10 0 110 210 10 -2 -1 10 010 A 10 1 Ιe Ιe (100 mA) ΙF OHR02182 τ 210 310 410 mA -510 10 -4 -310 -210 -110 010s T τ=D FΙ T τ DC 0,5 0,2 0,1 0,05 0,005 0,01 0,02 D Max. permissible forward current IF = f(TA) T OHR01124 A FΙ 0 2 04 06 08 0 1 0 0 C mA TL, R thJL= 650 K/W = 750 K/WthJAR Radiation characteristicsIrel= f (ϕ) OHR01878 02 0 40 60 80 100 1200.40.60.81.0 100 010203040 0.2 0.4 0.6 0.8 1.0ϕ