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Technical content

Features

Accuracy of remaining battery power level measurement

  • Accuracy of ±5% during discharging from 100% to 0% (at an ambient operating temperature of 0°C to 50°C) Measurement of remaining battery power level
  • The remaining power level is measured four times a second and calculated with each measurement undertaken. Interface
  • I 2Cbus, communication in slave mode up to 100kHz supported Ports
  • I 2C-bus communication pin 2 (SDA, SCL)
  • Battery temperature reading control pin 1 (TSW)
  • Analog voltage input pin for battery temperature 1 (TSENSE)
  • Reset pin 1 (RESB)
  • TEST pin 1 (TEST)
  • Power supply pin 2 (V SS, VDD) Package form
  • MFP10S (225 mil): LC709201FM-01/02/03 CMOS IC Battery Monitor IC

No.A2031-2/10

Applications

  • Cell phones, PDA devices, MP3 players, cordless phones, digital cameras, USB-related devices, etc. (Note) Depending on the kinds of battery, applicable model differs (LC709201F-01/02/03). Please contact us for more detail information. Package Dimensions unit : mm (typ) 3086B Package Dimensions unit : mm (typ) 3318 SANYO : MFP10S(225mil) (0.5) 1.7max 1.00.35 5.0 0.15 6.4 (1.5) 0.1 4.4 0.63 2.6 2.6 0.4 0.8 0.25 (0.035) SIDE VIEW SIDE VIEW BOTTOM VIEWTOP VIEW LASER MARKED INDEX 0.5 (0.55) (C0.116) (0.13) (0.125) SANYO : VCT16(2.6X2.6)

No.A2031-3/10 Pin Assignment SANYO: MFP10S (225mil) “Lead-free Type” SANYO: VCT16 (2.6×2.6) “Lead-free Type” LC709201FM Top view SCL SDA TSENSE TSW NC NC VSS RESB VDD TEST NC NC NC NC NC NC NC NC VSS RESB VDD TEST 12 3 4 12 11 10 9 SCL SDA TSENSE TSW LC709201FRD Top view

No.A2031-4/10 Block Diagram Pin Function Pin Name I/O Description VSS - - power pin VDD - + power pin RESB I Reset pin TEST I/O Test pin *Connect an external 100kΩ pull-down resistor. SDA I/O I 2C data pin SCL I/O I 2C clock pin TSW O Battery temperature reading control pin *Set high when reading in the temperature, held low at other times. TSENSE I Battery temperature analog voltage input pin Voltage detectRemaining voltage Processing Unit SCL SDA TSENSE I C interface

No.A2031-5/10 Absolute Maximum Ratings at Ta=25°C, VSS=0V Specification Parameter Symbol Pin/Remarks Conditions VDD[V] min typ max Unit Maximum supply voltage VDD max V DD -0.3 +6.5 Input voltage V I (1) RESB, TSENSE -0.3 VDD +0.3 Output voltage V O (1) TSW -0.3 VDD +0.3 Input/output voltage V IO (1) SDA, SCL, TEST -0.3 VDD +0.3 V MFP10S 110Allowable power dissipation Pd max VCT16 Ta=-40 to +85°C mW Operating ambient temperature Topr -40 +85 Storage ambient temperature Tstg -55 -125 Allowable Operating Conditions at Ta=-40 to +85°C, VSS=0V Specification Parameter Symbol Pin/Remarks Conditions VDD[V] min typ max unit Operating supply voltage VDD (1) V DD 2.25 5.5 High level input voltage VIH (1) SDA, SCL 2.25 to 5.5 0.3VDD +0.7 V DD VIL (1) 4.0 to 5.5 V SS 0.1VDD +0.4 Low level input voltage VIL (2) SDA, SCL 2.25 to 4.0 V SS 0.2V DD V Electrical Characteristics at Ta=-40 to +85°C, VSS=0V Specification Parameter Symbol Pin/Remarks Conditions VDD[V] min typ max Unit High level input current IIH (1) RESB, SDA, SCL VIN=VDD (including output transistor off leakage current) 2.25 to 5.5 1 Low level input current IIL (1) RESB, SDA, SCL VIN=VSS (including output transistor off leakage current) 2.25 to 5.5 -1 μA VOH (1) I OH=-0.4mA 3.0 to 5.5 V DD-0.4 High level output voltage VOH (2) TSW IOH=-0.2mA 2.25 to 5.5 V DD-0.4 VOL (1) I OL=3.0mA 3.0 to 5.5 0.4Low level output voltage VOL (2) TSW, SDA, SCL IOL=1.3mA 2.25 to 5.5 0.4 Hysteresis voltage VHYS RESB, SDA, SCL 2.25 to 5.5 0.1V DD V Pin capacitance CP All pins Pins other than the pin under test VIN=VSS f=1 MHz Ta=25°C 2.25 to 5.5 10 pF IDD (1) When detecting remaining capacity 2.25 to 5.5 8 16Consumption current IDD (2) VDD When not detecting remaining capacity 2.25 to 5.5 5 12 μA

No.A2031-6/10 I2C Slave Characteristics at Ta=-40 to+85°C, VSS=0V Specification Parameter Symbol Pin/Remarks Conditions VDD[V] min typ max unit Clock frequency TSCL SCL 100 kHz Bus free time between STOP condition and START condition TBUF SCL, SDA See Fig. 1. 4.7 μs Hold time (repeated) START condition First clock pulse is generated after this interval THD: STA SCL, SDA See Fig. 1. 4.0 μs Repeated START condition setup time TSU: STA SCL, SDA See Fig. 1. 4.7 μs STOP condition setup time TSU: STO SCL, SDA See Fig. 1. 4.0 μs Data hold time THD: DAT SCL, SDA See Fig. 1. 300 ns Data setup time TSU: DAT SCL, SDA See Fig. 1. 250 ns Clock low period TLOW SCL 4.7 μs Clock high period THIGH SCL 4.0 μs Clock/data fall time TF SCL, SDA 300 ns Clock/data rise time TR SCL, SDA 2.25 to 5.5 1000 ns tHD:STA tSU:STO tBUF tLOW tHD:DAT tHIGH tR tF tSU:DAT tSU:STA tHD:STA PS S P

No.A2031-7/10 Discharge Characteristics Figure2 Discharge Characteristics by Temperature Change Figure 3 Discharge Characteristics by Load Change

No.A2031-8/10 Communication Protocol Communication protocol type: I2C Frequency: 100kHz Address: 0x16 Bus Protocols S : Start Condition Sr : Repeated Start Condition Rd : Read (bit value of 1) Wr : Write (bit value of 0) A : ACK (bit value of 0) N : NACK (bit value of 1) P : Stop Condition CRC-8 : Slave Address to Last Data (ex.3778mV: 0x16, 0x09, 0x17, 0xC2, 0x0E → 0x86) : Master-to-Slave : Slave-to-Master … : Continuation of protocol Read Word Protocol S Slave Address Wr A Command Code A … Sr Slave Address Rd A Data Byte Low A Data Byte High … A CRC-8 N P Write Word Protocol S Slave Address Wr A Command Code A … Data Byte Low A Data Byte High A CRC-8 A P Slave Functions Command Code Range Access Unit Cell Temperature 0x08 0 to 65535 R 0.1°K Cell Voltage 0x09 0 to 65535 R mV Current 0x0A -32768 to 32767 R mA Adjustment Pack 0x0B 0 to 255 R Value Relative State Of Charge 0x0D 0 to 100 R % Remaining Capacity 0x0F 0 to 65535 R mAh Full Charge Capacity 0x10 0 to 65535 R mAh IC Version 0x11 0 to 65535 R Version Adjustment Thermistor 0x12 0 to 255 R Value Set Relative State Of Charge 0x08 0xA500 + 0 to 100 W 0xA500 + % Adjustment Pack 0x08 0x5A00 + 0 to 255 W 0x5A00 + Value Adjustment Thermistor 0x08 0xAA00 + 0 to 255 W 0xAA00 + Value Initial Relative State Of Charge 0x09 0xAA55 W -

No.A2031-10/10 PS This catalog provides information as of March, 2012. Specifications and information herein are subject to change without notice. SANYO Semiconductor Co.,Ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliab ility pr oducts, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equip ment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.