LC58E68 SANYO | Alldatasheet
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Technical content
Features
Unit: mm * Compatible with the LC586X series mask ROM devices 3152A-QFC80C * 16-Kbyte program EPROM 26 © 224-byte configuration EPROM 20 * 1Kbit RAM oe ons oe 32 ¢ LCD drivers ol ite OUBUTTHLIOaIG * 3 or 5 V supply cos | AANA 0 * 80-pin QIP = SI == = [E TTT | 3 TUDUSUDUTODUOORDUHUUNDE 24 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 11795TH (ID)/7142JN No. 3410—-1/19
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[| ‘scone oe a ee ce LCD drive bias circuit capacitor connections a } 6 i INTOE Multiplexed interrupt request (INT) and EPROM output enable (GE) input | os ‘SO2/A09 Multiptexed 4-bit inpcYoulput port SO (S01 to S04), serial port (S01 fo $03) and EPROM a Muliplexed 4-bitinpcYoutpul port A (A1 to Ad), EPROM address inputs (A12 to At4) and chip a ee | Multiplexed 4-bit inpuYoulput port P (P1 to P4) and EPROM dala bus lines (D4 to D7) ee ee cc Crystal oscillator conrections ee ae] LCD drive bias supply capacitor connections a [se Ceramic filler oscillatce connections - = a a ee Poe eI Multiplexed 4-bit input port $ (S1 to $4) and EPROM address inputs (AOO to AO) ee ce a ee ee Multiplexed 4-bit inpuvutput port K {K1 to KA) and EPROM data bus lines (00 to D3) No. 3410—3/19
a [| __Wan05 | satiplned «it inpuouput prt M (fo MA), EPROM adess igus (404 To A07) and timer ce a ee Multiplexed 4-bit, open-drain output port N (N1 to N4) and alarm signal output (N4) ee | «| TSTNPP Multiplexed test input (TST) and EPROM Vee supply (VPP) Specifications Absolute Maximum Ratings XTIN and CFIN input vollage range 0 to maximum generated volage Ports 8, K, P, SO and A, and RES, INT and TST input vollage range Ve 0.3 to Voo + 0.3 v Ports K, P, SO and A, and CUPI, CUP2, SEGI to SEG 98 and COM! to COMS oulput voltage range Vor 0.5 to Vop + 08 v feta ety we Ports K, P, M, SO, A and N, and SEG1 to SEG 36 raiaeareeerrsee [mT eee | | a No, 3410—4/19
Allowable Operating Ranges T. = 25 °C ee ee Notes 1. Voi = Voz = Vpp 2. Vopr = Vop2 = '2 X Vpp 3. Vopi = % X Vop, Von2 = s x Vop 4. Oscillator and ali internal circuits halted
Electrical Characteristics
Vpp = 2.8 to 3.2 V T, = 25 °C Voo = 3 V, Ci = C2=0.1 pF, Yebias, fa = 92.768 KHZ. See figure 2. LCD supply voltage 1 Voot v Von = 3 V, Ct = C2 = 0.1 pF, Yerbias, few = 32.768 kHz. See figure 3. Voo = 3 V, Ct = C2 = 0.1 pF LCD supply vollage 2 Vove Yebias, v fut = 92.768 KHz. See figure 3, Von = 3 V, few = 92 kHz, Cy = 20 pF, Z = 25 kQ, halt mode, ‘-bias. See figure 4, Voo = 3 V, fea = 98 oF 65 Itz, ‘Supply current Cy = 10 pF, pA Z, = 25 kQ, halt mode, ‘s-bias. See figure 4, Voo = 3 V, eer = 400 kHz, Cog = Cat = 990 PF, hall mode. See figure 6. No, 3410—5/19
i Voo = 3 V, fee = 1 MHZ, . Supply current Cop = Cog = 100 pF, pA halt mode. Sea figure 6, Voo = 3 V, ‘Supply leakage current standby mode. BA See figure 1. Ports S, K, P, M, SO and A, and INT LOW-level input voltage vu ee ee osteo ‘ Ports S, K, P, M, SO and A, and INT HiGH-evel input voltage a ee RES and CFIN LOW-level input arom [eT foe Ports K, P, M, SO and A . Ports K, P, M, SO and A . _ _ HIGH-evel voltage veo os oo ° | - | v SEG1 to SEG36 CMOS LOW-level . output vollage | ve feewmm | = fe fiw | SEG1 to SEG35 CMOS HIGH-level a . to *s f- | - | . SEG1 to SEG35 p-channel a _ SEG1 to SEG35 p-channel output _ lSereree reser |e rev Tf [Tm | SEG1 to SEG35 n-channel - LOW-level output voltage ae ee es SEG1 to SEG36 n-channel output . Static-blas SEG1 to SEG35 _ LOW-level outpul vollage a ee ee . Stalico-bias SEG1 to SEG35 . . HIGH-evel output voltage ee ‘ on ~ oe | vos feve-tom —fwe-ef - [ - [ov | Yebias SEG1 to SEG35 LOW-level - ears] we fare Te | = [|e | Yebias SEG1 fo SEG35 HIGH-level . carmen toe fem [we] - | - | | . No, 3410—6/19
syns | ines |e a Yebias COMI to COM4 LOW-level . v Yebias COM! to COM MID-level ¥ lox = 100 pA or (Voo + 2) (Yoo + 2) v ‘output voltage ‘ont lon = -100 pA - 02 +02 Yebias COM! to COMA HIGH-evel - . v oo ~ 02 | - | - | Yebias SEG1 to SEG35 LOW-evel . Vv Ee an ee Yebias SEG1 fo SEGI5 MiD-lovel Vows low = -20 HA = 02 +0 output voltage lo, = 20 pA or (2Von + 3) (2Vp0 + 3) v low = -20 WA = 02 +02 Yebias SEG1 to SEG35 HIGH-evel . 00 V output voltage Vous lon = -20 pA Von - 0. output voltage Ea rae ee Ysbias COM1 to COM4 MID-level Vous lon = -100 pA — 02 +02 ouput volage lo. = 100 HA or (2¥o0 + 3) (oo +3) } y lo = -100 pA - 02 + 02 Yebias COMI to COMA HIGH-evel - . y vo al | - [| - | Ports 8, K, P, M, SO and A LOW-level hold transistor input Vi = 0.200 1200 resistance Ports S, K, P, M, SO and A HIGH-evel hold transistor input Vy = 0.8Vo0 1200 Ka resistance Ports §, K, P, M, SO and A . [Seidareniseete | fe | wes j= | » | = | 0 Poris §, K, P, M, SO and A Vi = Veo pull-down transistor input resistance a INT LOW-level hold transistor input . INT HIGH-level hold transistor input . XTOUT oscillation compensating . capacitance Cy Vop = 3 V pF femme | = [| - [=| “7, a ce Ceramic filter oscillator operating 490 kHz frequency No. 3410—7/19
Voo = 4.5 to 5.5 V T, = 25 °C Voo = 5 V, C1 = C2 = 0.1 pF, Yebias, foal = 92.768 kHz, See figure 2. LCD supply voltage 1 Vv Von = 5 V, C1 = C2 = 0.1 pF, Yebias, 1.87 feo = 92.768 kHz. See figure 3. Yoo = 5 V, C1 = C2 = 0.1 pF, LCD supply voltage 2 Yebias, v far = 92.768 KHz. See figure 9. Voo = 8 V, tay = 82 kHz, Cy = 20 pF, Z = 25 kQ, halt mode, ‘s-bias, See figure 4. Voo = 5 V, feat = 98 oF 65 kHz, Cy = 10 pF, % = 25 kQ, hall mode, 'h-bias. See figure 4, Yoo = 5 V, for = 400 kHz, Cog = Cog = 330 pF, halt mode, Supply current See figure 5. pA Voo = 5 V, fer = 1 MHz, Cog = Cod = 100 pF, hall mode. See figure 6. Von = 5 V, fo = 2 MHz, Cog = Cos = 39 pF, halt mode. See figure 6, Vo = 5 V, lee = 4 MHz, Cog = Cog = 83 pF, 700 halt mode, See figure 6. Vpp = 5.5 V, Supply leakage current standby mode, pA See figure 1. Ports S, K, P, M, SO and A, and INT. LOW-evel input volege Pew Pe Le | ove Pv | No, 3410—8/19
[nn [te nae | Ports §, K, P, M, SO and A, and on, V v INT HIGH-level Input voltage Al | ia ia RES and CFIN LOW-evel input 025Vo0 Vv voltage RES and CFIN HiGH-evel input Vue 0.78Vo0 Voo v Voltage Ports K, P, M, SO and A - v Lote out votage tee [enema pf e |e | Ports K, P, M, SO and A Voo - 05 | Vop - 02 v Pots, KM, SO and A and vw assy Weve | = [Ty SEG! to SEG25 CMOS LOW-evel - v SEG! to SEG35 CMOS HIGH-evel oe Voo = v Output voltage Nowe fo = “2 A same Pf SEG! to SEG5 p-channel oe Vo < v HIGHevel output vollage Vous lon = ~260 HA bo ~ 08 SEGI to SEG35 p-channel oulput . leakage current Vo. = 0V HA SEG1 to SEG95 n-channel . v LOW-level output voltage ee ee SEGI to SEG9S n-channel output : 1 Slatiobias SEG to SEGSS . v femiaeiee [oe [aem Te | | Slafc-bias SEG1 to SEGIE - v HIGH-evel output voltage pv foe [wea f - | - | Staiobias COM HIGHJevel output oe - Vv vollage ows lon = “20 HA Neo = 02 pf Yebias SEG! to SEGS5 LOW-level . v Yebias SEGI fo SEGSS =o - v HIGH level output voltage von ~ 02 P- | | Yebias COMI to COM4 LOW-level . v ub vate iia ania P- ff e | Yebias COM! fo COM4 MID-evel ” lox = 200 BA or (Voo + 2) (oo + 2) v output voltage ‘on lon = -200 pA = 02 + 02 Yebias COM! fo COMA HIGH-level _ v sateen] ee fem [weet [| ae ga
symbol [tings [| pom be Ee Yebias SEG to SEGSS LOW-evel . lems] we [ure | fe fe | | ecw [fea] = [Mee] ov | Yrbias SEG1 to SEG35 MID-evel Vous lon = -20 HA 92 +02 output voltage lo. = 20 pA. or (2V00 + 8) (2Vo0 + 3) V lon = -20 pA - 02 +02 Yebias SEGI to SEG95 a _ v HIGH+evel output voltage Noo = 92 | - | - | Yrbias COM1 to COMS LOW-level . V ‘output voltage ee ee ee ee ee a ad ee 'hrblas COMI to COM MiD-evel Vows lon = ~200 pA = 02 +02 ouput voltage lo. = 200 pA or (2Vo0 + 9) (2Vo0 + 9) v lon = ~200 pA ~ 02 +02 ‘trbias COM1 to COM4 HIGH-level =o - Ports 8, K, P, M, SO and A ‘LOW-level hold transistor input Rit Mi = 0.2Vo0 resistance Ports 8, K, P, M, SO and A HIGH4evel hold transistor input Vi = 08Vpp resistance Ports S, K, P, M, SO and A . Pullup transistor input resistance | om | wes Le |» | » | « | Poris S, K, P, M, SO and A Wey pull-down transistor input resistance (= Yoo INT LOW-level hold transistor input . INT HIGH-level hold transistor - XTOUT oscillation compensating _ capactires Cs Voo = 8 V 2 pF Ce ee [emeww |» [= [| Ceramic filer oscilator operating frequency fone kHz No, 3410—10/19
COM1 to COM4 function as LCD common driver outputs. The active outputs and frame frequency for each duly oycle are shown in the table below, Frame cone frequency (Hz) | swe [oe | - | - ff eT poe [oe [oe Tf fe a Note 0 = 82.768 KHz UPI and CUP ar part of ho LCDdvevolge dor cau. When using or is, cuP2 connect a bipolar capacitor between these pins, otherwise leave them open. RES pulsewidths greater than 200 j2s resel the microprocessor, RES requires an extemal input resistor. INTIOE INT functions as the output enable input when the EPROM is addressed. SOWAO8 ‘S02/A09 Port SO functions as address bus inputs when the EPROM is addressed, SO1 also functions as the serial data input, S02 as the serial dala output and $O3 as the serial data clock input or SO¥AI0 ‘oulput. Clock direction and polarity are detennined by software, SOMA AWAN2 [tanto Tar rts a8 ass bu pus ard tcp ene int wn the EPROM AACE XIN and XTOUTtacin be el oso comets, cherie hey a et open The crystal frequency is a configuration option. The oscillator halls after a HOLD instruction. VDD1 and VDD2 function as LCD drive bias circuit capacitor connections. For each bias drive, connect these pins as shown below, voo VDD voO voDt vDO1 voDi voD2 voo2 voo2 voo2 4 vss vss vss CFIN CFIN and CFOUT tuncon as the ceramic filter connections, otherwise they are left open, The oscilator halls alter a HOLD or SLOW instruction. cFouT No, 3410—12/19
EC5868.EXE software and a general-purpose PROM development flowchart is shown in figure 13. debug ‘and debug it with the accompanying development tools. ‘execution Ailix an opaque seal over the LCS8E68 window. Figure 13. Development flowchart
development tools manual for further information. Figure 14. Conversion to EPROM format
For example, to convert the ROMSAMP.HEX program EP-SAMP.HEX download-format file, enter one of the file and the PLASAMP.HEX option data file into the following commands at the command line: A:> EC5868 ROMSAMP.HEX PLASAMP.HEX EP-SAMP.HEX or ° A:> EC5868 B:ROMSAMP.HEX B:PLASAMP.HEX C:EP-SAMP.HEX - or A:> EC5868 J FISSION IOI SIG IGOISISUIICISIEI IDIOTIC ICIS IS IO III IE * LCS58E68 PROGRAM & MASK OPTION CONVERSION Ver XXXX * FOIE ISIS ISIOI GOFF E GIES RISI ISIS IE ICIS IF IG III IE A: ROM PROGRAM NAME : B:ROMSAMP.HEX J A: PLA PROGRAM NAME : B:PLASAMP.HEX J A: EP ROM WRITE NAME : B:EP-SAMP.HEX A program completion message is output at the end of Note that the programmer provided with the EVA-520 conversion. and EVA-850 development tools cannot be used. Set the ons. rammer for a 256 Kbyte PROM, V,., = 21 V and If , will f the Programmer » Nee an error occurs the program issue one of the program addresses 0000H to 40EFH. following error messages. * Error ON filename.HEX, FILE NOT FOUND The WS58E68Q adapter board, shown in figure 15, is The file filename.HEX was not found or the file name pace in the PROM programmer secre and the was incorrect, LCS58E68 to be programmed, in the W58E68Q adapter. * Error ON, MAKE LC5864H, 63H, 62H The ROM data and option data are not consistent, The cross assembler and option data software used should be for the same device. * Error ON filename.HEX, EOF NOT DETECTED <2) The file filename.HEX does not have a record end LS Pintot marker or the file is corrupted. > sta *¢ Error ON filename .HEX, ILLEGAL NWA CHARACTER PAN i! The file filename.HEX contains a non-hexadecimal Kem pe character, aie 0, gi * Error ON filename.HEX, ADDRESS OVER Xe Ne a An address in the file filename.HEX exceeds the address limit. \\ . Pin 1 of 26-pin DIP socket * Error ON filename.HEX, ILLEGAL FILE HDR. The file filename.HEX does not have the correct 7 LC586X series header or there is an error in the hex Figure 15. WS8E68Q adapter board file, Affix an opaque seal to the window of the programmed * Error ON command line input, INVALID LC58E68 when not programming the EPROM. NUMBER OF PARAMETERS The number of parameters entered on the command . line is incorrect. Erasing the EPROM * Error ON ILLEGAL, MASK OPTION DATA The EPROM data can be erased with a standard UV The mask option data is incorrect. EPROM eraser. PROM programmer and W58E68Q adapter Soldering board Do not use the solder-dip process for soldering the Programming the LC58E68 requires a general-purpose LCS8E68. PROM programmer and a W58E68Q adapter board. No. 3410—17/19
The reset state is released following a HIGH-to-LOW program execution begins. Configuration options are transition on RES. Configuration options and the seg- invalid and segment outputs are held at Vss from when ment output control PLA are initialized during the next RES goes HIGH until the options are initialized. 256 clock cycles, The program counter is then reset and
Ordering Information
Typically, a mask ROM LC586X ‘series device is assembler and another three EPROMs each containing ordered after a system bas been prototyped with the the option data generated using the option specification LC58E68. However, a programmed LCS8E68 or an tool. LCS58E68-format hex file cannot be used to specify the 4 specify A comparison of LCS8E68 characteristics with those of mask ROM device. : ener ; LCS586X series mask ROM devices is shown in tables When ordering, provide three EPROMs each containing 1 and 2. the mask ROM program generated using a standard Table 1. Electrical characteristics comparison Table 2. Configuration comparison
- Configure as static drive if not used.
- Strobe numbers 00 to 1EH can be used in applications that use a 2 MHz ceramic resonator. Strobe numbers OE, OF
and 1EH cannot be used in applications that use a 4 MHz ceramic resonator.
Table 3. LC586X series devices Table 4. Recommended ceramic resonators for LC5862H/63H/64H/66H/68H mask ROMs the like, the failure of which may directly or indirectly cause injury, death or property loss. their officers and employees jointly or severally.