LC33832P SANYO | Alldatasheet
Document overview
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- PDF pages: 9
Technical content
Features
- 32768 words · 8 bits configuration
- Single 5 V ±10% power supply
- All input and output (I/O) TTL compatible
- Fast access times and low power dissipation
- 4 ms refresh using 256 refresh cycle
- CE-only refresh, auto-refresh, and self-refresh
- Low-power version: 100 µA self-refresh current
- Package DIP28-pin (600 mil) plastic package: LC33832P, PL DIP28-pin (300 mil) plastic package: LC33832S, SL SOP28-pin (450 mil) plastic package: LC33832M, ML Package Dimensions unit: mm 3012A-DIP28 unit: mm 3133-DIP28 SANYO: DIP28 [LC33832P, PL] SANYO: DIP28 [LC33832S, SL] LC33832P, S, M, PL, SL, ML-70/80/10 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
256 K (32768 words · 8 bits) Pseudo-SRAM
LC33832P, S, M, PL, SL, ML -70 -80 -10 CE access time 70 ns 80 ns 100 ns OE access time 30 ns 35 ns 40 ns Cycle time 115 ns 130 ns 160 ns Current drain Operating 65 mA 60 mA 50 mA Standby 1 mA/100 µA (L version)
- CE access time/OE access time/Cycle time/Current drain
LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430-2/9 Block Diagram unit : mm 3158-SOP28 [LC33832M, ML] SANYO: SOP28
LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430-3/9 Pin Assignment Pin Functions A0 to A14 Address input WE Read/Write input OE/RFSH Output-enable input/ refresh input CE Chip-enable input I/O1 to I/O8 Data input/output VCC Power supply GND Ground Functional Logic CE OE WE A0 to A7 A8 to I/O1 State /RFSH A14 to I/O8 H H X X X HZ Standby L L H VX VX OUT Read L H L VX VX IN Write L H H VX X HZ CE-only refresh H L X X X HZ Self-refresh H NP X X X HZ Auto-refresh
LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430-4/9 Specifications Absolute Maximum Ratings Parameter Symbol Ratings Unit Note Maximum supply voltage VCC max –1.0 to +7.0 V 1 Input voltage VIN –1.0 to +7.0 V 1 Output voltage VOUT –1.0 to +7.0 V 1 Allowable power dissipation Pd max 600 mW 1 Output short-circuit current IOUT 50 mA 1 Operating temperature Topr 0 to +70 °C 1 Storage temperature Tstg –55 to +150 °C 1 Note: 1) Stresses greater than the above listed maximum values may result in damage to the device. DC Recommended Operating Ranges at Ta = 0 to +70°C Parameter Symbol min typ max Unit Note Supply voltage VCC 4.5 5.0 5.5 V 2 Input high level voltage VIH 2.4 6.5 V 2 Input low level voltage VIL –1.0 +0.8 V 2 Note: 2)All voltages are referenced to GND. Parameter Symbol Conditions min max Unit Note Operating current ICCA Average current during operation 70ns 65 Access 80ns 60 mA 3,4 time 100ns 50 Standby current 1 ICCS1 CE = OE/RFSH = VIH 1 mA Standby current 2 ICCS2 CE = OE/RFSH = VCC –0.2V LC33832P, S, M 1 mA LC33832PL, SL, ML 100 µA Self-refresh current ICCSR CE = VCC –0.2V, OE/RFSH = 0.2V LC33832P, S, M 1 mA LC33832PL, SL, ML 100 µA Input leakage current IIL 0V≤VIN≤VCC , pins other than test pin = 0V –10 +10 µA Output leakage current IOL D OUT disable, 0V≤VOUT ≤VCC –10 +10 µA Output high level voltageVOH IOUT = –5mA 2.4 V Output low level voltageVOL IOUT = 4.2mA 0.4 V Note: 3)All current values are measured at minimal cycle rate. Since current flows immoderately, cycle times may become longer and shorter than shown here. 4) Dependent on output load. Maximum value is value during free state. Input/Output Capacitance Characteristics at Ta = 25°C, f = 1MHz, VCC = 5V±10% Parameter Symbol min max Unit Test conditions Input capacitance (A0 to A14) C IN1 5 pF VIN1 = 0 V Input capacitance (CE, OE/RFSH, WE)C IN2 7 pF VIN2 = 0 V Input/output capacitance C I/O 10 pF VI/O= 0 V Sampling inspections, and not full-lot inspections, are carried out for these parameters.
LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430-5/9 LC33832P, S, M, PL, SL, ML Parameter Symbol -70 -80 -10 Unit Note min max min max min max Random read, tRC 115 130 160 ns write cycle time Read-write cycle time tRMW 165 195 240 ns CE pulse width tCE 70 10000 80 10000 100 10000 ns CE precharge time tP 35 40 50 ns CE access time tCEA 70 80 100 ns OE access time tOEA 30 35 40 ns CE output enable time tCLZ 10 10 10 ns OE output enable time tOLZ 0 0 0 ns WE output enable time tWLZ 0 0 0 ns CE output disable time tCHZ 0 20 0 25 0 30 ns 10 OE output disable time tOHZ 0 20 0 25 0 30 ns 10 WE output disable time tWHZ 0 20 0 25 0 30 ns 10 OE hold time for CE tOHC 0 0 0 ns OE setup time for CE tOSC 10 10 10 ns Read command setup time tRCS 0 0 0 ns Read command hold time tRCH 0 0 0 ns Write pulse width tWP 55 60 70 ns Write command hold time tWCH 55 60 70 ns Write command lead time tCWL 55 60 70 ns Input data setup time for WE tDSW 30 35 40 ns 11 Input data setup time for CE tDSC 30 35 40 ns 11 Input data hold time for WE tDHW 0 0 0 ns 11 Input data hold time for CE tDHC 0 0 0 ns 11 Address setup time for CE tASC 0 0 0 ns 12 Address hold time for CE tAHC 15 20 25 ns 12 Auto-refresh cycle time tFC 115 130 160 ns RFSH delay time for CE tRFD 35 40 50 ns RFSH pulse width (auto-refresh)tFAP 75 8000 80 8000 80 8000 ns 13 RFSH precharge time tFP 30 30 30 ns 13 (auto-refresh) RFSH active CE delay time tFCE 135 160 190 ns 13 (auto-refresh) RFSH pulse width (self-refresh)tFAS 8000 8000 8000 ns 13 RFSH precharge CE delay time tFRS 135 160 190 ns 13 (self-refresh) Refresh time tREF 4 4 4 ms Rise and fall time tT 3 50 3 50 3 50 ns Continued on next page.
LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430-6/9 Continued from preceding page. Note :5) To accomplish internal initialization, CE and OE/RFSH are fixed at VIH for an interval of 1 ms when VCC reaches the specified voltage after power is switched on. 6) Measured at tT = 5 ns. 7) When measuring input signal timing, VIH (min) and VIL (max) are reference levels. 8) Measured using an equivalent of 100 pF and two standard TTL loads. 9) OE/RFSH input functions as output-enable input (OE) when CE = VIL, and as refresh input (RFSH) when CE = VIH. 10) tCHZ , tOHZ , and tWHZ are defined as the time until output enters the open circuit state and the output voltage level becomes immeasurable. 11) As with ordinary static RAM, write data is incorporated at the rise of WE input or CE input, whichever is earlier, and write data is therefore held during tDSW , tDSC , tDHW , or tDHC . 12) Because address input is incorporated at the fall of CE, the address is maintained during tASC or tAHC . 13) Auto-refresh and self-refresh are determined by OE/RFSH pulse width when CE = VIH, and are defined as auto-refresh when below tFAP (max), or as self-refresh when above tFAS (min). In order to activate CE after the completion of each refresh, tFCE must be assured for auto-refresh, or tFRS must be assured for self-refresh.
LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430-7/9 Timing Chart Read Cycle Write Cycle
LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430-8/9
No. 4430-9/9 LC33832P, S, M, PL, SL, ML-70/80/10 Auto-Refresh Cycle Note: A0 to A14, WE: “H” or “L” Self-Refresh Cycle Note: A0 to A14, WE: “H” or “L” This catalog provides information as of February, 1997. Specifications and information herein are subject to change without notice. n No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. n Anyone purchasing any products described or contained herein for an above-mentioned use shall: À Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: \` Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. n Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.