LBT-124 LETEX | Alldatasheet

Document overview

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Technical content

Features

˙Compact package based on the double-mold method. ˙High resolution (slit width = 0.4mm). ˙Gap between emitter and detector is 2.0mm.

Applications

˙Floppy disk drives ˙Printers ˙Cameras Outline Dimensions (Unit: mm)

1 Anode

2 Cathode

3 Emitter

4 Collector21

--2-- Letex Technology Corp. Subminiature Photointerrupter Model No: LBT-124 Absolute Maximum Ratings (Ambient Temperature: 25℃) Item Symbol Rating Units Note Input Forward current IF 50 mA Reverse voltage VR 5 V Power dissipation PD 75 mW Output Collector-emitter voltage Vceo 30 V Emitter-collector voltage Veco 4.5 V Collector power dissipation PC 80 mW Storage Temperature Tstg -40 to +100 ℃ Operating Temperature Top -25 to +85 ℃ Soldering Temperature Tsol 260 ℃ 10 seconds max. Electrical Specifications (Ambient Temperature: 25℃) Item Symbol Min. Typ. Max. Units Conditions Input Forward voltage VF 1.3 1.6 V IF=50mA Peak forward voltage VFM 3 4 V IFM=0.5A Reverse current IR 10 µA VR=5V Output Collector dark current Iceo 0.5 µA Vce=10V Peak sensitivity wavelength λP 800 nm Collector-emitter breakdown voltage BVceo 30 V Ice=50µA Emitter-collector breakdown voltage BVeco 4.5 V Iec=50µA Combinat ion Collector current Ic 0.2 1.0 mA Vce=5V , IF=20mA Collector-emitter saturation voltage Vce(sat) 0.4 V IF=20mA, Ic=0.1A Response time Tr/tf 10 µs IF=5mA, Vcc=5V , RL=100Ω Infrared light emitter diode Cut-off frequency fC 1 MHz IF=50mA Peak light emitting wavelength λP 950 nm Photo transistor Response time Tr/tf 10 µs VCC=5V , IC=1mA, RL=100Ω Maximum sensitivity wavelength λP 800 nm

--3-- Letex Technology Corp. Subminiature Photointerrupter Reference Data Relative collector current Vs. Shield distance IF = 20mA Vce = 5V Ta=25° Collector current Vs. Forward current Response time Vs. Load resistance Collector current Vs. Ambient temperature 0.15 Relative collector current (%) C-E Saturation voltage (V)0.05 -25 0.10 Ambient temperature (℃) 0 25 50 75 100 Shield distance (mm) -2 0 -1 -2 2 1 0 -1 1 C-E Saturation voltage Vs. Ambient temperature 0.25 0.20

0.30 Collector current (uA)

-25 IF = 40mA Ic=1mA 100 Ambient temperature (℃) 25 0 75 50 100 IF = 20mA Vce = 5V tr Response time (μ s) 0.2 Load resistance (kΩ ) 0.2 0.03 0.1 0.05 0.1 0.5 td 2 10.5 10 5 ts 500 200 100 Vce = 2V Ic = 2mA Ta = 25℃ tf Forward current (mA) 100 200 500 Collector current (mA) Forward voltage (V) 0 10 Forward current (mA) 20 40 25℃ 25℃ Ta = 75℃ 50℃ 0℃ Forward current Vs. Forward voltage Vce = 5V Ta = 25℃ Forward current (mA) -30 Ambient temperature (℃) 0 25 50 75 100 125 Power dissipation (mW) Ambient temperature (℃) -25 0 25 50 75 100 100 Forward current Vs. Ambient temperature Collector dark current Vs. Ambient temperature Vcc Test circuit for resopnse time RDInput OutputOutput Input RL 90% 10% Ambient temperature (℃) Collector dark current (A) -25 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 50 100 75 Vce = 20V 20mA Collector current (mA) IF=10mA Collector-Emitter voltage (V) 1 0 3 2 4 6 5 7 9 8 10 Collector current Vs. Collector-Emitter voltage Ta = 25℃ 40mA 30mA 50mA 10 -2 Duty ratio 100 Peak forward current (mA) 125 10 5 -3 2 5 200 500 2000 1000 2 10 5 5 2 10 0 Pulse width 100us Ta = 25℃ Peak forward current Vs. Duty ratio