LBSS84LT1G_15 LRC | Alldatasheet

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LESHAN RADIO COMPANY, LTD. LBSS84LT1G SOT –23 /C0080/C0111/C0119/C0101/C0114/C0032/C0077/C0079/C0083/C0070/C0069/C0084 P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. Energy Efficient Miniature SOT–23 Surface Mount Package Saves Board Space Symbol Value Unit Drain–to–Source Voltage V DSS V dc Gate–to–Source Voltage – Continuous V GS ± 20 V dc Drain Current – Continuous @ T A = 25°C – Pulsed Drain Current (t p ≤ 10µs) I D I DM 130 520 mA Total Power Dissipation @ T A = 25°C P D 225 mW Operating and Storage Temperature Range T J stg – 55 to 150 Thermal Resistance – Junction–to–Ambient R θJA 556 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds T L 260 Rating MAXIMUM RATINGS J = 25 C unless otherwise noted)

3 Drain

/C0050 Gate Source Marking Diagram M Pb-Free Package is available. Device Package Shipping LBSS84LT1G SOT-23 3000/Tape&Reel LBSS84LT3G SOT-23 10000/Tape&Reel

ORDERING INFORMATION

/C0032/C0109/C0065/C0109/C0112/C0115/C0044/C0032/C0053/C0048/C0032/C0086/C0111/C0108/C0116/C0115 130 PD = Device Code M = Month Code PD We declare that the material of product are Halogen Free and compliance with RoHS requirements. Rev .A 1/4 S-LBSS84LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBSS84LT1G S-LBSS84LT3G

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) V(BR)DSS Vdc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 0.1 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS ±10 nAdc ON CHARACTERISTICS (Note 1.) Gate–Source Threaded Voltage (VDS = VGS , ID = 250 Adc) VGS(th) 0.8 2.0 Vdc Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 100 mAdc) rDS(on) 5.0 Ohms Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) |yfs| mS DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) C iss pF Output Capacitance (VDS = 5.0 Vdc) C oss Transfer Capacitance (VDG = 5.0 Vdc) C rss 5.0 SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time td(on) 2.5 ns Rise Time (VDD = –15 Vdc, ID = –2.5 Adc, tr 1.0 Turn–Off Delay Time (VDD 15 Vdc ID 2

5 Adc

R L = 50 Ω) td(off) Fall Time tf 8.0 Gate Charge Q T 6000 pC SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current IS 0.130 A Pulsed Current ISM 0.520 Forward Voltage (Note 2.) VSD 2.5 V 1. Pulse Test: Pulse Width≤ 300 µs, Duty Cycle≤ 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS /C0048 /C0048/C0046/C0051 /C0048/C0046/C0052 /C0048/C0046/C0049 /C0048/C0046/C0054 /C0048/C0046/C0050 Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR SOT D JK L A C B S H GV mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 LESHAN RADIO COMPANY, LTD. Rev .A 4/4 LBSS84LT1G,S-LBSS84LT1G