LBSS5240LT1G LRC | Alldatasheet

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LESHAN RADIO COM PAN Y, LTD. General Purpose Transistors MAXIMUM R ATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 V Collector–Base Voltage V CBO –40 V Emitter–Base Voltage V EBO –5.0 V Collector Current — Continuous I C –2 A power dissipation P D 0.3 W Junction temperature T j 150 °C Storage temperature T stg -65 +150 °C SOT– 23 EMITTER COLLECTOR BASE LBSS5240LT1G Rev.O 1/5 cm THERMAL CHARACTERISTICS Symbol Parameter Conditions Value Unit R th(j-a) thermal resistance from junction to ambient in free air;note 1 in free air;note 2

417 K/W

260 K/W

1.Device mounted on a printed-circuit board,single sided copper,tinplated and standard footprint. Notes: 2.Device mounted on a printed-circuit board,single sided copper,tinplated and mounted pad for collector 1 cm. -40V,-2A Low VCE(sat) PNP Silicon

ORDERING INFORMATION

  • Low collector-emitter saturation voltage
  • High current capability
  • Improved device reliability due to reduced heat generation
  • Replacement for SOT89/SOT223 standard packaged transistors.
  • Supply line switching circuits
  • Battery management applications
  • DC/DC converter applications
  • Strobe flash units
  • Heavy duty battery powered equipment (motor and lamp drivers). PNP low V CEsat transistor in a SOT23 plastic package. NPN complement: LBSS4240LT1G . We declare that the material of product compliance with•

DESCRIPTION

APPLICATIONS

FEATURES

RoHS requirements. S-LBSS5240LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBSS5240LT1G LBSS5240LT3G ZF ZF 3000/Tape & Reel 10000/Tape & Reel Device Marking Shipping S-LBSS5240LT1G S-LBSS5240LT3G

ELECTRICAL CHARACTERISTICS

A = 25°C unless otherwise noted.) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I CBO collector-base cut-off current V CB = −30 V; I E = 0 − −100 nA I EBO emitter-base cut-off current V BE = −4 V; I C = 0 − −100 nA h FE DC current gain V CE = −2 V I C = −100 mA 300 − I C = −500 mA 260 − I C = −1 A 210 − I C = −2 A 100 − V CEsat collector-emitter saturation voltage I C = −100 mA; I B = −1 mA − −100 mV I C = −500 mA; I B = −50 mA − −110 mV I C = −750 mA; I B = −15 mA − −225 mV I C = −1 A; I B = −50 mA − −225 mV I C = −2 A; I B = −200 mA − −350 mV V BE(on) base-emitter turn-on voltage V CE = −2 V; I C V BEsat base-emitter saturation voltage I C = −2 A; I B = −200 mA − −1.1 V f T transition frequency I C = −100 mA; V CE = −10 V; f = 100 MHz 100 − MHz C c collector capacitance V CB = −10 V; I E = I e = 0; − 28 pF f = 1 MHz LESHAN RADIO COM PAN Y, LTD. LBSS5240LT1G,S-LBSS5240LT1G Rev.O 2/5

LESHAN RADIO COM PAN Y, LTD. Rev.O 3/5 ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C) 100 1000 10000 0.001 0.01 0.1 1 10 VCE=-2V Ta=25C Ta=-55C Ta=150C 0.2 0.4 0.6 0.8 1.2 0.001 0.01 0.1 1 10 VCE=-2V Ta=25C Ta=-55C Ta=150C 1000 IC/IB=20 Ta=25C Ta=-55C Ta=150C IC/IB=20 Ta=25C Ta=-55C Ta=150C 100 0.0001 0.001 0.01 0.1 1 10 0.1 0.0001 0.001 0.01 0.1 1 10 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) Fig.1 DC CURRENT GAIN VS.COLLECTOR CURRENT BASE TURN-ON VOLTAGE : VBE(on) (V) COLLECTOR CURRENT : IC (A) Fig.2 BASE-EMITTER TURN-ON VOLTAGE VS.COLLECTOR CURRENT COLLECTOR SATURATION COLLECTOR CURRENT : IC (A) Fig.3 COLLECTOR-EMITTER SATURATION VOLTAGE VS.COLLECTOR CURRENT VOLTAGE : VCE(sat) (mV) BASE-EMITTER SATURATION COLLECTOR CURRENT : IC (A) VOLTAGE : VBE(sat) (V) Fig.4 BASE-EMITTER SATURATION VOLTAGE VS.COLLECTOR CURRENT LBSS5240LT1G,S-LBSS5240LT1G

LESHAN RADIO COM PAN Y, LTD. ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C) 0.1 100 1000 0.0001 0.001 0.01 0.1 1 10 IC/IB=20 Ta=25C Ta=-55C Ta=150C 012345 IB=-2mA IB=-4mA IB=-6mA IB=-8mA IB=-10mA IB=-12mA IB=-14mA IB=-16mA IB=-18mA IB=-20mA COLLECTOR-EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.5 COLLECTOR CURRENT VS.COLLECTOR- EMITTER SATURATION VOLTAGE (Ω) COLLECTOR CURRENT : IC (A) COLLECTOR-EMITTER SATURATION RESISTANCE:Rce Fig.6 COLLECTOR-EMITTER SATURATION RESISTANCE VS.COLLECTOR CURRENT Rev.O 4/5 LBSS5240LT1G,S-LBSS5240LT1G

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 SOT D JK L A C B S H GV mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 LESHAN RADIO COMPANY, LTD. Rev.O 5/5 LBSS5240LT1G,S-LBSS5240LT1G