LBSS139WT1G_15 LRC | Alldatasheet

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LESHAN RADIO COM PAN Y, LTD. LBSS139WT1G 200 mAMPS

50 VOLTS

R DS(on) = 3.5 N - Channel Device Packag e Shipping ORDERIN G INFORM ATION LBSS139WT1G SC-70 3000 Tape & Reel J2 = Device Code M = Month Code MARKIN G DIAGRAM & PIN ASSIGNMENT Power MOSFET 200 mAmps, 50 Volts N–Channel SC–70 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCI A cards, cellular and cordless telephones. voltage applications Miniature SC–70 Surface Mount Package saves board space Symbol Value Unit Drain–to–Source Voltage VDSS Vdc Gate–to–Source Voltage – Continuous VGS ± 20 Vdc Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) ID IDM 200 800 mA Total Power Dissipation @ TA = 25°C PD 150 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 Thermal Resistance – Junction–to–Ambient R θJA 833 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 Rating MAXIMUM RATINGS (T A = 25 o C unless otherwise noted) Pb−Free Package May be A vailable. The G−Suffix Denotes a Pb−Free Lead Finish LBSS139WT3G 10000 Tape & Reel M ESD Protected:1500V g d s SOT–323 / SC – 70 SC-70 Rev .A 1/6

LESHAN RADIO COMPANY, LTD. LBSS139WT1G

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VG S = 0 Vdc, ID = 250 µAdc) V(BR)DSS Vdc Zero Gate Voltage Drain Current (VD S = 25 Vdc, VG S = 0 Vdc) (VD S = 50 Vdc, VG S = 0 Vdc) IDSS 0.1 0.5 µAdc Gate–Source Leakage Current (VG S = ± 20 Vdc, VD S = 0 Vdc) IGSS ±10 µAdc ON CHARACTERISTICS (Note 1.) Gate–Source Threshold Voltage (VD S = VG S, ID = 1.0 mAdc) VGS(th) 0.5 1.5 Vdc Static Drain–to–Source On–Resistance (VG S = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C) (VG S = 5.0 Vdc, ID = 200 mAdc) rDS(on) 5.6 3.5 Ohms Forward Transconductance (VD S = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) gfs 100 mmhos DYNAMIC CHARACTERISTICS Input Capacitance (VD S = 25 Vdc, VG S = 0, f = 1 MHz) C iss pF Output Capacitance (VD S = 25 Vdc, VG S = 0, f = 1 MHz) C oss Transfer Capacitance (VDG = 25 Vdc, VG S = 0, f = 1 MHz) C rss SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time td(on) ns Turn–Off Delay Time (VDS = 30 Vdc, IDS = 0.5 Adc,) td(off) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. Rev .A 2/6 22.8 3.5 2.9 3.8

LESHAN RADIO COMPANY, LTD. LBSS139WT1G TYPICAL ELECTRICAL CHARACTERISTICS Rev .A 3/6 Output Characteristics Drain-Source On Resistance I D - Drain Current (A) R DS(ON) - On Resistance (Ω) V DS - Drain-Source Voltage (V) I D - Drain Current (A) Transfer Characteristics Gate Threshold Voltage R DS(ON) - On Resistance (Ω) Normalized Threshold Voltage V GS - Gate-Source Voltage (V) T j - Junction Temperature (°C) 0.0 0.2 0.4 0.6 0.8 1.0 3.0 V V GS = 4,5,6,8,10 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 V GS = 4.5V V GS = 10 V -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 I DS = 250 μ A 123456789 1 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 I D = 0.5 A

LESHAN RADIO COMPANY, LTD. LBSS139WT1G TYPICAL ELECTRICAL CHARACTERISTICS Rev .A 4/6 Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance I S - Source Current (A) T j - Junction Temperature (°C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) V GS - Gate-Source Voltage (V) V DS - Drain-Source Voltage (V) Q G - Gate Charge (pC) -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 R ON j = 25 o C: 1.2 Ω V GS = 10 V I D = 0.5 A 0.1 T j = 150 o C T j =25 o C 0 5 10 15 20 25 30 Frequency = 1 MHz Crss Coss Ciss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V DS = 10 V I DS = 0.5 A

LESHAN RADIO COMPANY, LTD. LBSS139WT1G TYPICAL ELECTRICAL CHARACTERISTICS Rev .A 5/6 Drain-Source On Resistance Drain-Source On Resistance Normalized On Resistance R DS(ON) – On Resistance(Ω) T j - Junction Temperature (°C) I D - Drain Current (A) Drain-Source On Resistance R DS(ON) – On Resistance(Ω) I D - Drain Current (A) I D - Drain Current (A) V GS – Gate Voltage (V) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V GS = 4.5 V V GS = 10 V R ON j = 25 o C: 1.2 Ω I D = 0.5 A 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 T J = 125 O C T J = 85 O C T J = 25 O C V GS = 4.5V T J = -55 O C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 T J = 125 O C T J = 85 O C T J = 25 O C V GS = 10V T J = -55 O C 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T j =125 o C T j =25 o C T j =-55 o C

LESHAN RADIO COMPANY, LTD.LESHAN RADIO COMPANY, LTD. LBSS139WT1G SC A A2 D b e E c L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches SCALE 10:1 XX M XX = Specific Device Code M = Date Code = Pb−Free Package GENERIC MARKING DIAGRAM *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. SOLDERING FOOTPRINT* H E DIM A MIN NOM MAX MIN MILLIMETERS 0.80 0.90 1.00 0.032 INCHES A1 0.00 0.05 0.10 0.000 A2 0.7 REF b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 D 1.80 2.10 2.20 0.071 E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 NOM MAX L 2.00 2.10 2.40 0.079 0.083 0.095 H E e1 0.65 BSC

0.425 REF

0.028 REF

0.026 BSC

0.017 REF

Rev .A 6/6