LBSS139DW1T1G LRC | Alldatasheet

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  1. FEATURES
  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. voltage applications.
  • ESD Protected:1500V 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25º C) – Continuous TA = 25°C – Pulsed (tp≤10μs) 4. THERMAL CHARACTERISTICS Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC Derate above 25º C Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 ºC º C/W ºC−55∼+150TJ,Tstg RΘJA 328 LBSS139DW1T1G S-LBSS139DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 ID 200 IDM 800 LBSS139DW1T3G J2 10000/Tape&Reel Parameter Symbol Limits Device Gate–to–Source Voltage – Continuous VGS ± 20 Unit Drain–Source Voltage VDSS Marking Shipping LBSS139DW1T1G J2 3000/Tape&Reel Drain Current Vdc Vdc mAdc Parameter Symbol Limits Unit 380 mW mW/º C PD 3.05 SC88(SOT-363) Leshan Radio Company, LTD. Rev.B Jan 2016 1/7

LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = 250μAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 25 Vdc) (VGS = 0, VDS = 50 Vdc) Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = - 20 Vdc) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 1.0mAdc) Static Drain–Source On–State Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. gfs mS 100 - - pF pF Ciss - 22.8 - Coss Crss - 3.5 - - 2.9 - pF Typ. Max. IGSSR - - -10 μAdc μAdc μAdc Ohms - - Unit Vdc 50 - - Symbol Min. 0.1 Vdc 0.5 IGSSF 5.6 10 1.5 - - - 3.5 - - 10 TA = –40°C to +85°C) VGS(th) IDSS RDS(on) 0.5 VBRDSS (VDD = 30 Vdc , VGEN =

10 V,RG =25Ω ,RL =60

Ω,ID =500 mAdc) Turn-On Delay Time Turn-Off Delay Time td(off) td(on) ns - 19 - - 3.8 - Leshan Radio Company, LTD. Rev.B Jan 2016 2/7

Leshan Radio Company, LTD. Rev.B Jan 2016 3/7 LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 6.ELRCTRICAL CHARACTERISTICS CURVES Power Dissipation Drain Current P tot - Power (W) I D - Drain Current (A) T j - Junction Temperature (°C) T j - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance I D - Drain Current (A) Normalized Effective Transient V DS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 T A =25 o C 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Mounted on 1in pad R θ JA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 T A =25 o C,V G =10V 0.1 1 10 100 300 1E-3 0.01 0.1 1ms 300us Rds(on) Limit T C = 25 o C 10ms 100ms DC 100us

Leshan Radio Company, LTD. Rev.B Jan 2016 4/7 LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 6.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Transfer Characteristics Gate Threshold Voltage R DS(ON) - On Resistance (Ω) Normalized Threshold Voltage V GS - Gate-Source Voltage (V) T j - Junction Temperature (°C) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 I DS = 250 μ A 123456789 1 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 I D = 0.5 A Output Characteristics Drain-Source On Resistance I D - Drain Current (A) R DS(ON) - On Resistance (Ω) V DS - Drain-Source Voltage (V) I D - Drain Current (A) 0.0 0.2 0.4 0.6 0.8 1.0 3.0 V V GS = 4,5,6,8,10 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 V GS = 4.5V V GS = 10 V

Leshan Radio Company, LTD. Rev.B Jan 2016 5/7 LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 6.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance I S - Source Current (A) T j - Junction Temperature (°C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) V GS - Gate-Source Voltage (V) V DS - Drain-Source Voltage (V) Q G - Gate Charge (pC) -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 R ON j = 25 o C: 1.2 Ω V GS = 10 V I D = 0.5 A 0.1 T j = 150 o C T j =25 o C 0 5 10 15 20 25 30 Frequency = 1 MHz Crss Coss Ciss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V DS = 10 V I DS = 0.5 A

Leshan Radio Company, LTD. Rev.B Jan 2016 6/7 LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 6.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Drain-Source On Resistance Drain-Source On Resistance Normalized On Resistance R DS(ON) – On Resistance(Ω) T j - Junction Temperature (°C) I D - Drain Current (A) Drain-Source On Resistance R DS(ON) – On Resistance(Ω) I D - Drain Current (A) I D - Drain Current (A) V GS – Gate Voltage (V) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V GS = 4.5 V V GS = 10 V R ON j = 25 o C: 1.2 Ω I D = 0.5 A 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 T J = 125 O C T J = 85 O C T J = 25 O C V GS = 4.5V T J = -55 O C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 T J = 125 O C T J = 85 O C T J = 25 O C V GS = 10V T J = -55 O C 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T j =125 o C T j =25 o C T j =-55 o C

LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 8.SOLDERING FOOTPRINT 1.10 --- --- 0.043 0.004 0.006 0.0090.15 0.22 0.70 D MIN NOM MAX MIN NOM C DIM MILLIMETERS INCHES --- --- b 0.08 MAX A 0.003 1.80 0.15 E e aaa 0.65 BSC 0.026 BSC 0.15 BSC 0.006 BSC 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 Leshan Radio Company, LTD. Rev.B Jan 2016 7/7