LBSS138DW1T1G LRC | Alldatasheet

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  1. FEATURES
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  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. voltage applications. 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25º C) – Continuous TA = 25°C – Pulsed (tp≤10μs) 4. THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25º C Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 ºC º C/W ºC−55∼+150TJ,Tstg RΘJA 556 LBSS138DW1T1G S-LBSS138DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 ID 200 IDM 800 LBSS138DW1T3G J1 10000/Tape&Reel Parameter Symbol Limits Device Gate–to–Source Voltage – Continuous VGS ± 20 Unit Drain–Source Voltage VDSS Marking Shipping LBSS138DW1T1G J1 3000/Tape&Reel Drain Current Vdc Vdc mAdc Parameter Symbol Limits Unit 225 mW mW/º C PD 1.8 SC88(SOT-363) Leshan Radio Company, LTD. Rev.B Mar 2016 1/6

LBSS138DW1T1G, S-LBSS138DW1T1G Power MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = 250μAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 25 Vdc) (VGS = 0, VDS = 50 Vdc) Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = - 20 Vdc) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 1.0mAdc) Static Drain–Source On–State Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. gfs mS 100 - - pF pF Ciss - 40 50 Coss Ciss - 12 25 - 3.5 5.0 pF Typ. Max. IGSSR - - -0.1 - - - - 0.1 μAdc μAdc μAdc Ohms - - Unit Vdc 50 - - Symbol Min. 0.1 Vdc 0.5 5.6 10 1.5 - 3.5 TA = –40°C to +85°C) VGS(th) IDSS RDS(on) 0.5 VBRDSS IGSSF Turn-On Delay Time (VDD = 30 Vdc , ID =200 mAdc) Turn-Off Delay Time td(off) td(on) ns - - 20 - - 20 Leshan Radio Company, LTD. Rev.B Mar 2016 2/6

LBSS138DW1T1G, S-LBSS138DW1T1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 -55 -5 45 95 145 VGS(th), Variance(V) Temperature(℃） ID=1mA 0.5 1.5 2.5 -55 -5 45 95 145 RDS(on), Drain-to-source Resistance(Normallized) Temperature(℃) VGS=2.75V,ID=200mA VGS=5V,ID=200mA 0.2 0.4 0.6 0.8 0 1 2 3 ID,Drain Current(A) VGS,Gate-to-Source Voltage(V) VDS=10V 150℃ 25℃ -55℃ 0.2 0.4 0.6 0.8 0 1 2 3 4 5 6 7 ID,Drain Current(A) VDS,Drain-to-Source Voltage(V) VGS=3V VGS=3.25V VGS=2.75V VGS=2.5V VGS=3.5V On-Region Characteristics Transfer Characteristics RDS(on) vs. Temperature Threshold Voltage vs.Temperature Leshan Radio Company, LTD. Rev.B Mar 2016 3/6

LBSS138DW1T1G, S-LBSS138DW1T1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.5 1.5 2.5 3.5 RDS(ON),Drain-to-Source Resistance(Ω) ID,Drain Current(A) VGS=10V 150℃ 25℃ -55℃ 0.5 1.5 2.5 3.5 RDS(ON),Drain-to-Source Resistance(Ω) ID,Drain Current(A) VGS=5V 150℃ 25℃ -55℃ 0.5 1.5 2.5 3.5 0.1 0.15 0.2 0.25 RDS(ON),Drain-to-Source Resistance(Ω) ID,Drain Current(A) VGS=2.75V 150℃ 25℃ -55℃ 1.0E-08 1.0E-07 1.0E-06 1.0E-05 0 10 20 30 40 50 IDSS,Drain-to-Source Leakage(A) VDS,Drain-to-Source Voltage(V) 150℃ 125℃ IDSS vs. VDS RDS(on) vs. ID RDS(on) vs. ID RDS(on) vs. ID Leshan Radio Company, LTD. Rev.B Mar 2016 4/6

LBSS138DW1T1G, S-LBSS138DW1T1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0 5 10 15 20 25 30 C,Capacitor(pF) VDS(V) Ciss Coss Crss 0.001 0.01 0.1 0 0.5 1 1.5 IS,Diode Current(A) VSD,Forward Voltage(V) 150℃ 25℃ -55℃ Body Diode Forward Voltage Capacitor vs.VDS Leshan Radio Company, LTD. Rev.B Mar 2016 5/6

LBSS138DW1T1G, S-LBSS138DW1T1G Power MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 8.SOLDERING FOOTPRINT bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 1.10 --- --- 0.043 0.004 0.006 0.0090.15 0.22 0.70 D MIN NOM MAX MIN NOM C DIM MILLIMETERS INCHES --- --- b 0.08 MAX A 0.15 0.65 BSC 0.026 BSC 0.003 1.80 aaa 0.15 BSC 0.006 BSC 0.15 0.01 E e Leshan Radio Company, LTD. Rev.B Mar 2016 6/6