LBSS123LT1 LRC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
LBSS123LT1–1/4 LESHAN RADIO COMPANY, LTD. SOT-23 LBSS123LT1 Gate Source Drain N-CHANNEL POWER MOSFET LBSS123LT1 FEATURE ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS123LT1 SA 3000/Tape&Reel LBSS123LT1G SA (Pb-Free) 3000/Tape&Reel LBSS123LT3 SA 10000/Tape&Reel LBSS123LT3G SA (Pb-Free) 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) VGS VGSM ±20 ±40 Vdc Vpk Drain Current Continuous (Note 1.) Pulsed (Note 2.) ID IDM 0.17 0.68 Adc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RJA 556 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width 300 s, Duty Cycle 2.0%.
LESHAN RADIOCOMPANY,LTD. LBSS123LT1–2/4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 250 µAdc) V(BR)DSS 100 Vdc Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25°C TJ = 125°C IDSS µAdc Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS nAdc ON CHARACTERISTICS (Note 4.) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 2.8 Vdc Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 100 mAdc) rDS(on) 5.0 6.0 Ω Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) gfs mmhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss 9.0 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss 4.0 pF SWITCHING CHARACTERISTICS(4) Turn–On Delay Time (VCC = 30 Vdc, IC = 0.28 Adc, td(on) ns Turn–Off Delay Time (VCC
30 Vdc, IC
0.28 Adc,
VGS = 10 Vdc, RGS = 50 Ω) td(off) ns REVERSE DIODE Diode Forward On–Voltage (ID = 0.34 Adc, VGS = 0 Vdc) VSD 1.3 V 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. LBSS123LT1
LESHAN RADIOCOMPANY,LTD. LBSS123LT1–4/4 LBSS123LT1 D J K L A C B S H G V mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 PIN 1. Gate 2. Source 3. Drain 0.031 0.8 SOT-23