LBCW65ALT1G LRC | Alldatasheet

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Technical content

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol V alue Unit Collector–Emitter Voltage V CEO

32 Vdc

Collector–Base Voltage V CBO

60 Vdc

Emitter–Base Voltage V EBO

5.0 Vdc

Collector Current — Continuous I C 800 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) P D 225 mWT A = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation P D 300 mWAlumina Substrate, (2) T A = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C DEVICE MARKING LBCW65ALT1G = EA

ELECTRICAL CHARACTERISTICS

A = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown VoltageV (BR)CEO 32 — — Vdc C = 10mAdc, I B = 0 ) Collector–Emitter Breakdown VoltageV (BR)CES 60 — — Vdc C = 10 µAdc, V EB = 0 ) Emitter–Base Breakdown Voltage E = 10 µAdc, I C = 0) V (BR)EBO 5.0 — — Vdc Collector Cutoff Current I CES CE = 32 Vdc, I E = 0 ) — — 20 nAdc CE = 32 Vdc, I E = 0 , T A = 150°C) — — 20 µAdc Emitter Cutoff Current EB = 4.0 Vdc, I C = 0) I EBO — — 20 nAdc LBCW65ALT1G EMITTER COLLECTOR BASE CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Featrues compliance with RoHS requirements. We declare that the material of product Rev.O 1/3

LESHAN RADIO COMPANY, LTD. A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain h FE ( I C = 100 µAdc, V CE = 10 Vdc ) 35 — — ( I C = 10 mAdc, V CE = 1.0 Vdc ) 75 — 220 ( I C = 100 mAdc, V CE = 1.0 Vdc ) 100 — 250 ( I C = 500 mAdc, V CE = 2.0 Vdc ) 35 — — Collector–Emitter Saturation Voltage V CE(sat) Vdc ( I C = 500 mAdc, I B ( I C = 100 mAdc, I B Base–Emitter Saturation Voltage V BE(sat) Vdc ( I C = 500 mAdc, I B SM SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f T 100 — — MHz(I C = 20mAdc, V CE = 10 Vdc, f = 100 MHz) Output Capacitance C obo — — 1 2 p F(V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance C ibo — — 8 0 p F(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure NF — — 10 dB CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 kΩ , f = 1.0 kHz, BW = 200 Hz) SWITCHING CHARACTERISTICS Turn–On Time t on — — 100 ns(I = I = 15 mAdc) Turn–Off Time t off — — 400 ns(I C = 150 mAdc, R L = 150 Ω ) LBCW65ALT1G

Ordering Information

LBCW65ALT1G EA 3000/Tape&Reel LBCW65ALT3G EA 10000/Tape&Reel Rev.O 2/3

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 SOT D JK L A C B S H GV mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 LESHAN RADIO COMPANY, LTD. Rev.O 3/3