LBC846BDW1T1 LRC | Alldatasheet

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LESHAN RADIO COMPANY, LTD. LBC846b–1/5 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector–Emitter Voltage V CEO V Collector–Base Voltage V CBO V Emitter–Base Voltage V EBO 6.0 6.0 5.0 V Collector Current -Continuous I C 100 100 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P D 380 mW Per Device 250 mW FR– 5 Board, (1) TA = 25°C Derate above 25°C 3.0 mW/°C Thermal Resistance, Junction to Ambient R θJA 328 °C/W Junction and Storage Temperature T J , T stg –55 to +150

ORDERING INFORMATION

SOT–363

3000 Units/Reel

SOT–363 SOT–363 SOT–363 SOT–363

LESHAN RADIO COMPANY, LTD. LBC846b–2/5 LBC846BDW1T1, LBC847BDW1T1, LBC847CDW1T1, LBC848BDW1T1, LBC848CDW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V (BR)CEO V (I C = 10 mA) LBC846 Series LBC847 Series LBC848 Series Collector–Emitter Breakdown Voltage V (BR)CES V (I C = 10 µA, V EB = 0) LBC846 Series LBC847 Series LBC848 Series Collector–Base Breakdown Voltage V (BR)CBO V (I C = 10 µA) LBC846 Series LBC847 Series LBC848 Series Emitter–Base Breakdown Voltage V (BR)EBO V (I E = 1.0 µA) LBC846 Series 6.0 LBC847 Series 6.0 LBC848 Series 5.0 Collector Cutoff Current (V CB = 30 V) I CBO nA (V CB = 30 V, T A = 150°C) 5.0 µA ON CHARACTERISTICS DC Current Gain h FE (I C = 10 µA, V CE = 5.0 V) LBC846B, LBC847B, LBC848B — 150 LBC847C, LBC848C — 270 (I C = 2.0 mA, V CE = 5.0 V) LBC846B, LBC847B, LBC848B 200 290 450 LBC847C, LBC848C 420 520 800 Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat) 0.25 V Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA) 0.6 Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V BE(sat) 0.7 V Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) 0.9 Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) V BE(on) 580 660 700 mV Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) 770 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f T 100 MHz (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) C obo 4.5 pF Noise Figure (I C = 0.2 mA, NF dB V CE = 5.0 V dc, R S = 2.0 kΩ, LBC846B, LBC847B, LBC848B — f = 1.0 kHz, BW = 200 Hz) LBC847C, LBC848C — 4.0