LBC847ATT1G LRC | Alldatasheet

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Features

Pb−Free Packages are Available MAXIMUM RATINGS A = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage V CEO V Collector−Base Voltage V CBO V Emitter−Base Voltage V EBO 6.0 V Collector Current − Continuous I C 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, FR−4 Board (Note 1) T A = 25°C Derated above 25°C P D 200 1.6 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 1) R JA 600 °C/W Total Device Dissipation, FR−4 Board (Note 2) T A = 25°C Derated above 25°C P D 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 2) R JA 400 °C/W Junction and Storage Temperature Range T J , T stg −55 to +150 1. FR−4 @ min pad. 2. FR−4 @ 1.0 × 1.0 in pad. LBC847ATT1G Series EMITTER COLLECTOR BASE LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon applications. They are housed in the SC−89 package which SC-89

ORDERING INFORMATION

SC−89 3,000 / Tape & Reel LBC847BTT1G 3,000 / Tape & Reel LBC847CTT1G 3,000 / Tape & Reel is designed for low power surface mount applications. SC−89 SC−89 Rev.O 1/5 S-LBC847ATT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC847ATT1G S-LBC847BTT1G S-LBC847CTT1G

ELECTRICAL CHARACTERISTICS

A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage C = 10 mA) LBC847 Series V (BR)CEO V Collector−Emitter Breakdown Voltage C = 10 A, V EB = 0) LBC847 Series V (BR)CES V Collector−Base Breakdown Voltage C = 10 A) LBC847 Series V (BR)CBO V Emitter−Base Breakdown Voltage E = 1.0 A) LBC847 Series V (BR)EBO 6.0 V Collector Cutoff Current (V CB = 30 V) CB = 30 V, T A = 150°C) I CBO 5.0 nA A ON CHARACTERISTICS DC Current Gain C = 10 A, V CE = 5.0 V) LBC847A LBC847B LBC847C C = 2.0 mA, V CE = 5.0 V) LBC847A LBC847B LBC847C h FE 110 200 420 150 270 180 290 520 220 450 800 Collector−Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Collector−Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) V CE(sat) 0.25 0.6 V Base−Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Base−Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) V BE(sat) 0.7 0.9 V Base−Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) Base−Emitter Voltage (I C = 10 mA, V CE = 5.0 V) V BE(on) 580 660 700 770 mV SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) f T 100 MHz Output Capacitance (V CB = 10 V, f = 1.0 MHz) C obo 4.5 pF Noise Figure C = 0.2 mA, V CE = 5.0 Vdc, R S = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF dB LESHAN RADIO COMPANY, LTD. LBC847ATT1G Series Rev.O 2/5 S-LBC847ATT1G Series

LESHAN RADIO COMPANY, LTD. G M 0.08 (0.003) X D 3 PL J -X- -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. A B Y N 2 PL K C -T- SEATING PLANE DIM A MIN NOM MIN NOM INCHES 1.50 1.60 1.70 0.059 MILLIMETERS B 0.75 0.85 0.95 0.030 C 0.60 0.70 0.80 0.024 D 0.23 0.28 0.33 0.009 G 0.50 BSC H 0.53 REF J 0.10 0.15 0.20 0.004 K 0.30 0.40 0.50 0.012 L 1.10 REF S 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013

0.020 BSC

0.021 REF

0.006 0.008 0.016 0.020

0.043 REF

−−− 10 −−− 10 0.063 0.067 MAX MAX /C0095 /C0095 /C0095 /C0095 M H H L G RECOMMENDED PATTERN OF SOLDER PADS S SC Rev.O 5/5 LBC847ATT1G Series S-LBC847ATT1G Series