LBAV74LT1 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. G6–1/2 ANODE ANODE CATHODE DEVICE MARKING LBAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R Vdc Forward Current I F 200 mAdc Peak Forward Surge Current I FM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board (1) P D 225 mW T A = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 5.0 µAdc) V (BR) Vdc Reverse Voltage Leakage Current I R µAdc (V R = 50 Vdc, T J = 125°C) 100 (V R = 50Vdc) 0.1 Diode Capacitance C D 2.0 pF (V R = 0, f = 1.0 MHz) Forward Voltage V F Vdc (I F = 100 mAdc) 1.0 Reverse Recovery Time t rr 4.0 ns (I F=IR=10mAdc, IR(REC)=1.0mAdc, measured at IR= 1.0 mA, RL=100Ω) LBAV74LT1 CASE 318–08, STYLE 9 SOT–23 (TO–236AB) Monolithic Dual Switching Diode