LBAS16WT1 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. LBAS16WT1–1/4 Silicon Switching Diode Symbol Max Unit Continuous Reverse Voltage VR V Recurrent Peak Forward Current IR 200 mA Peak Forward Surge Current Pulse Width = 10 µs IFM(surge) 500 mA Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) PD 200 1.6 mW mW/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) RθJA 0.625 °C/mW DEVICE MARKING LBAS16WT1 = A6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF 715 866 1000 1250 mV Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR 1.0 µA Capacitance (VR = 0, f = 1.0 MHz) CD 2.0 pF Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1) trr 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2) QS PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR 1.75 V CATHODE ANODE SC-70/SOT-323 LBAS16WT1 Rating MAXIMUM RATINGS (TA = 25 oC)
LESHAN RADIO COMPANY, LTD. 0.7 1.9 0.028 0.65 0.025 0.65 0.025 inches mm 0.075 0.035 0.9 PIN 1. ANODE 2. NO CONNECTION 3. CATHODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM MIN MAX MIN MAX MILLIMETERS INCHES A 0.071 0.087 1.80 2.20 K 0.017 REF 0.425 REF L 0.026 BSC 0.650 BSC N 0.028 REF 0.700 REF S 0.079 0.095 2.00 2.40 B 0.045 0.053 1.15 1.35 C 0.032 0.040 0.80 1.00 D 0.012 0.016 0.30 0.40 G 0.047 0.055 1.20 1.40 H 0.000 0.004 0.00 0.10 J 0.004 0.010 0.10 0.25 C N A L D G S B H J K 0.05 (0.002) SC-70 / SOT-323 LBAS16WT1 LBAS16WT1-4/4