LB1964

LB1964T SANYO | Alldatasheet

Document overview

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Technical content

Features

• Single-phase full-wave drive
• Low-voltage operation (V CC = 2.0V min.)
• Low-saturation output (upper side + lower side saturation voltage: V osat (total) = 0.3V typ., Io = 100 mA)
• Ultraminiature package (3.0 · 4.9 · 0.93 mm3)
• FG output
• Built-in thermal protection circuit LB1964T Package Dimensions unit: mm 3245-MSOP8 O2599RM(KI) Monolithic Digital IC Fan Motor Single-Phase Full-Wave Driver [LB1964T] SANYO : MSOP8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Maximum supply voltage V CC max 9 V Allowable power dissipation Pd max With specified substrate* 370 mW OUT output current I OUT max 0.3 A OUT output withstand voltage V OUT max 9 V FG output withstand voltage V FG max 7 V FG output current I FG max 5 mA Operating temperature Topr –20 to +85 ˚C Storage temperature Tstg –55 to +150 ˚C 4.9 3.0 0.65 3.0 (0.5) (0.85) 0.5 0.25 0.25 0.08 1.1max Allowable Operating Ranges at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Power supply voltage V CC 2 to 8 V Hall input common mode input voltage VICM 0.2 to VCC –1 V range Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN * Specified substrate (20.0 · 10.0 · 0.8 mm3 paper phenol)

No. 6188-2/4 Electrical Characteristics at Ta = 25˚C, VCC = 3.3V , unless otherwise specified Parameter Symbol Conditions Ratings Unitmin typ max Current drain Icc 3 4.5 mA OUT output Low saturation voltage V OL IO = 100 mA 0.2 0.3 V OUT output High saturation voltage VOH IO = 100 mA 0.2 0.3 V Hall bias voltage VHB RH = 360W 1.17 1.27 1.37 V Hall input sensitivity V HN Zero peak value 1 7 mV FG output Low voltage V FG IFG = 3 mA 0.2 0.3 V FG output leak current I FGL VFG = 7V 30 mA Thermal protection operating TTSD Assured design target* 150 180 200 ˚C temperature * Assured design target: Target value, not measured individually Truth Table IN– IN+ OUT1 OUT2 FG Mode H L H L L Rotating LHLH O f f – – Off Off – In thermal protection Pin Assignment 0.2 0.37 0.4 0.6 –20 0 20 40 60 80 100 Allowable power dissipation, Pd max – W Pd max – Ta Ambient temperature, Ta – ˚C 0.19 With specified substrate (20.0 · 10.0 · 0.8 mm3) paper phenol LB1964T IN– IN+ HB OUT1 GND Top view OUT2 FG V CC

No. 6188-3/4 Sample Application Circuit Block Diagram GND Thermal protection circuit M FG Control circuit HB HALL IN– IN+ VCC OUT1 OUT2 Delay circuit Constant voltage circuit Delay circuit *1 When a diode is used to protect the IC from destruction in case of reverse connection, the capacitor Cr must be inserted to provide a regenerative current route. Similarly, a capacitor is needed in the power supply line, even if no diode is used. *2 The Hall element is supplied with a constant-voltage bias of approx. 1.27V from the HB pin. This ensures stable output with good temperature characteristics from the Hall element. Because the LB1964T incorporates a Hall amplifier with low offset, it provides coil output with a stable duty. *3 The Hall amplifier does not have a hysteresis characteristic. The OUT1 and IN– pins are at the same phase, and by arranging the two pins next to each other, chatter during phase switching is prevented. However, if the wiring leading to the IN– pin is long, some noise interference may occur. In such a case, the following steps should be considered: (1) Arrange parts layout with priority to proximity of Hall element and IC, to allow short Hall element output wiring. (2) Insert a resistor of about 10 to 100 kW between OUT1 and IN– to create a hysteresis characteristic. GND V CC FG OUT1 OUT2IN+ IN– H HB Di Cr

No. 6188-4/4 This catalog provides information as of October, 1999. Specifications and information herein are subject to change without notice. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS 0.2 0.4 0.6 0.8 1.0 0 100 200 300 400 0.4 0.2 0.8 0.6 1.2 1.0 1.6 1.4 2.0 1.8 0123456789 1 0 02 3 14 5 6 7 8 9 1 0 Upper + lower side Lower side Upper side Hall bias voltage, HB – V RH = 560Ω R H = 360Ω IN+ = L IN+ = L IN– = L IN– = L 360Ω 240Ω Current drain, ICC – mA Output saturation voltage, V O (sat) –V ICC – VCC VO(sat) – IO HB – VCC Power supply voltage, VCC – V Output current, IO – mA V CC = 3V Power supply voltage, VCC – V Tc = 25˚C Ta = 25˚C