LB1948MC SANYO | Alldatasheet

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Technical content

Features

  • Supports 12V power supply systems
  • Low saturation voltage: VO(sat) = 0.5V (typical) at IO = 400mA
  • Zero current drawn in standby mode
  • Braking function
  • Supports parallel connection: IO max = 1.6A, VO(sat) = 0.6V (typical) at IO = 800mA
  • Built-in spark killer diode
  • Built-in thermal shutdown circuit
  • Miniature package: MFP-10S (6.4mm × 5.0mm) Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Maximum supply voltage V CC max -0.3 to +20 V Output voltage V OUT -0.3 to +20 V Input voltage V IN -0.3 to +18 V Ground pin source current I GND Per channel 800 mA Allowable power dissipation Pd max Mounted on a specified board* 870 mW Operating temperature Topr -20 to +85 °C Storage temperature Tstg -40 to +150 °C * Specified board: 114.3mm × 76.1mm × 1.6mm, glass epoxy board. Caution 1) Absolute maximum ratings represent the value which cannot be exceeded for any length of time. Caution 2) Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current, high voltage, or drastic temperature change, the reliability of the IC may be degraded. Please contact us for the further details. Monolithic Digtal IC 12V Low Saturation Voltage Drive Forward/Reverse Motor Driver

No.A2015-2/6 Allowable Operating Range at Ta = 25°C Parameter Symbol Conditions Ratings Unit Supply voltage VCC 2.5 to 16 V Input high-level voltage V IH 1.8 to 10 V Input low-level voltage V IL -0.3 to +0.7 V Electrical Characteristics at Ta = 25°C, VCC = 5V Parameter Symbol Conditions Ratings Unit min typ max Current drain I CC0 IN1, 2, 3, 4 = 0V (Standby mode) 0.1 10 μA ICC1 *1 (Forward or reverse mode) 15 21 mA ICC2 *2 (Brake mode) 30 40 mA Output saturation voltage V O(sat)1 I OUT = 200mA (High Side and Low Side) 0.25 0.35 V VO(sat)2 I OUT = 400mA (High Side and Low Side) 0.50 0.75 V Input current I IN V IN = 5V 85 110 μA Spark Killer Diode Reverse current I S(leak) 30 μA Forward voltage V SF I OUT = 400mA 1.7 V *1:IN1/IN2/IN3/IN4=H/L/L/L or L/H/L/L or L/L/H/L or L/L/L/H. *2:IN1/IN2/IN3/IN4=H/H/L/L or L/L/H/H. Package Dimensions unit : mm (typ) 3420 Pin Assignment 1VCC 2IN1 3IN2 4IN3 5IN4 OUT1 OUT2 OUT3 OUT4 GND LB1948MC Top view SANYO : MFP10SK(225mil)

0.8 MAX

1.55 1.0 0.35 5.0 0.15 6.2 (1.5) 0.05 4.4 0.5 -20 0 20 40 60 80 1000 1.0 0.8 0.6 0.4 0.2 Pd max -- Ta 0.87 0.45 Ambient temperature, Ta -- C Allowable power dissipation, Pd max -- W Specified board: 114.3×76.1×1.6mm3 glass epoxy board.

No.A2015-3/6 Truth Table Input Output Notes IN1 IN2 IN3 IN4 OUT1 OUT2 OUT3 OUT4 L L L L OFF OFF OFF OFF Standby mode L L OFF OFF 1CH Standby mode H L H L Forward L H L H Reverse H H L L Brake L L OFF OFF 2CH Standby mode H L H L Forward L H L H Reverse H H L L Brake Block Diagram VCC IN1 IN2 IN3 IN4 OUT1 OUT2 OUT3 OUT4 GND M M 60kΩ 80kΩ 60kΩ 80kΩ 60kΩ 80kΩ 60kΩ 80kΩ 10μF Control block Thermal shutdown circuit

No.A2015-4/6 Design Documentation (1) Voltage magnitude relationship There are no restrictions on the magnitude relationships between the voltages applied to VCC and IN1 to IN4. (2) Parallel connection The LB1948MC can be used as a single-channel H-bridge power supply by connecting IN1 to IN3, IN2 to IN4, OUT1 to OUT3, and OUT2 to OUT4 as shown in the figure. (IOmax = 1.6A, VO(sat) = 0.6V (typical) at IO = 800mA) 1V CC

2 IN1

3 IN2

4 IN3

5 IN4

M (3) Observe the following points when designing the printed circuit board pattern layout.

  • Make the VCC and ground lines as wide and as short as possible to lower the wiring inductance.
  • Insert bypass capacitors between VCC and ground mounted as close as possible to the IC.
  • Resistors of about 10KΩ must be inserted between the CPU output ports and the IN1 to IN4 pins if the microcontroller and the LB1948MC are mounted on different printed circuit boards and the ground potentials differ significantly. (4) Penetration electric current At the time of the next mode shift, a penetration electric current is generated in VCC-GND. There are not the deterioration of the IC by), the destruction as follows 1Atyp per this penetration electric current (1ch, 1μs; but for the stabilization of the power supply line of the IC is most recent, and, please can enter with a condenser. (i) Forward (Reverse) ↔ Brake (ii) Forward ↔ Reverse (iii) Standby → Brake In addition, the penetration electric current disappears when I put a wait mode of 10μs at the time of the change of the Forward ↔ Reverse. (5) Supplementary matter of the penetration electric current According to (4), a penetration electric current cannot influence IC life. Thermal Shutdown Temperature (1) Thermal shutdown temperature The thermal shutdown temperature Ttsd is 200 ± 20°C with fluctuations. (2) Thermal shutdown operation The operation of the thermal shutdown circuit is shown in the figure below. When the chip temperature Tj is in the direction of increasing (solid line), the output turns off at approximately 200°C. When the chip temperature Tj is in the direction of decreasing (dotted line), the output turns on (returns) at approximately 125°C. 100 120 140 160 180 200 220 VCC = 12V

100 C 220 C

220 C 100 C

Chip temperature, Tj -- C Output voltage, VO -- V LB1948MC Thermal shutdown reference chart

No.A2015-5/6 Thermal Shutdown Circuit Block Diagram Vref Reference voltage circuit Thermal shutdown circuit Drive circuit Function equivalent circuit Note: The above is an example of thermal shutdown circuits although there are some differences from the actual internal circuit. Thermal Shutdown Operation The thermal shutdown circuit compares the voltage of the heat sensitive element (diode) with the reference voltage and shuts off the drive circuit at a certain temperature to protect the IC chip from overheating. ICC -- VCC IIN -- VIN VO(sat) -- IO ICC -- Ta 0 5 10 15 20 0 5 10 15 20 400 100 200 300 0.6 0.1 0.3 0.5 0.2 0.4 0 100 200 300 400 500 600 -40 -20 0 20 40 60 80 100 120 140 VIN = 5V (= IN1 / IN2 or IN3 / IN4) H / H H / L, L /H L / L VCC = 12V IN1~4 VCC = 12V VCC = 12V (IN1 / 2) H /H H / L, L /H Current drain, ICC -- mA Supply voltage, VCC -- V Input current, IIN -- μA Input voltage, VIN -- V Output saturation voltage, VO(sat) -- V Current drain, ICC -- mA Output current, IO -- mA Ambient temperature, Ta -- °C High side and Low side

PS No.A2015-6/6 0.1 0.2 0.3 0.4 0.5 0.7 0.6 0 40 80 12020 60 100 140 VCC = 12V High side and Low side IO = 400mA 300mA 200mA 100mA VO(sat) -- Ta -20-40 Output saturation voltage, VO(sat) -- V Ambient temperature, Ta -- °C This catalog provides information as of March, 2012. Specifications and information herein are subject to change without notice. SANYO Semiconductor Co.,Ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliab ility pr oducts, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equip ment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.