LB1947VC SANYO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

  • PWM current control (fixed OFF time)
  • Selectable current decay pattern (FAST, SLOW, and MIX DECAY modes)
  • Simultaneous ON prevention function (feed-through current prevention)
  • Built-in thermal shutdown circuit
  • Built-in noise canceler Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Maximum motor supply voltage V BB max 50 V Output peak current I O peak t w ≤ 20μs 2.25 A Output continuous current I O max 2.0 A Logic supply voltage V CC max 7.0 V Logic input voltage range V IN -0.3 to VCC V Emitter output voltage V E max 1.1 V Reference voltage V REF -0.3 to VCC V Allowable power dissipation Pd max Independent IC 1.3 W Operating temperature Topr -20 to +85 °C Storage temperature Tstg -55 to +150 °C Caution 1) Absolute maximum ratings represent the value which cannot be exceeded for any length of time. Caution 2) Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current, high voltage, or drastic temperature change, the reliability of the IC may be degraded. Please contact us for the further details. Monolithic Digital IC PWM Current Control Type Forward/Reverse Motor Driver

No.A2035-2/11 Allowable Operating Ranges at Ta = 25°C Parameter Symbol Conditions Ratings Unit Motor supply voltage V BB 10 to 45 V Logic supply voltage V CC 4.75 to 5.25 V Reference voltage V REF 0 to VCC-2 V Electrical Characteristics at Ta = 25°C, VCC = 5V Parameter Symbol Conditions Ratings Unit min typ max Output Block Output stage supply current I BB ON No-load state, Forward 0.4 0.6 1.0 mA IBB BR No-load state, Brake 0.2 0.4 0.8 mA IBB OFF No-load state, Output off 0.2 0.4 0.8 mA IBB wt No-load state, Standby mode 0.1 mA Output saturation voltage V Osat1 I O = +1.0A, Sink 1.2 1.5 V VOsat2 I O = +2.0A, Sink 1.6 1.9 V VOsat3 I O = -1.0A, Source 1.8 2.2 V VOsat4 I O = -2.0A, Source 2.1 2.4 V Output leak current I O1(leak) V O = VBB, Sink 50 μA IO2(leak) V O = 0V, Source -50 μA Output sustain voltage V SUS L = 3.9mH, I O = 2.0A, Design guarantee value* 50 V Logic Block Logic supply current I CC ON IN1: High, IN2: Low, ST: High 11 16 21 mA ICC BR IN1: Low, IN2: High, ST: High 11 16 21 mA ICC OFF IN1: Low, IN2: Low, ST: High 11 16 21 mA ICC wt ST: Low 1.0 2 3.0 mA Logic pin input voltage (ST, IN1, IN2, VI) VINH High level voltage 2 V VINL Low level voltage 0.8 V Logic pin input current (ST, IN1, IN2, VI) IINH V IN = 5V 60 90 120 μA IINL V IN = 0.8V 6 10 13 μA Sensing voltage V E 0 1 . 1 V Sensing voltage 25H V EH25 VI = High, V REF = 2.5V 0.970 1.0 1.030 V Sensing voltage 25L V EL25 VI = Low, V REF = 2.5V 0.483 0.5 0.513 V Sensing voltage 15H V EH15 VI = High, V REF = 1.5V 0.385 0.4 0.410 V Sensing voltage 15L V EL15 VI = Low, V REF = 1.5V 0.190 0.2 0.210 V Sensing voltage 05H V EH05 VI = High, V REF = 0.5V 0.190 0.2 0.210 V Sensing voltage 05L V EL05 VI = Low, V REF = 0.5V 0.092 0.1 0.108 V Reference current Iref V REF = 1.0V -0.5 +0.5 μA CR pin current I CR CR = 1.0V -1.56 -1.3 -1.04 mA MD pin input voltage V MDH High level voltage V CC-0.3 V VMDM Middle level voltage 0.3V CC V CC-1.0 V VMDL Low level voltage .0.4 V MD pin input current I MDH MD = V CC-0.5V, CR = 1.0V -1.0 +1.0 μA IMDL MD = 0.4V, CR = 2.0V -5.0 μA Thermal shutdown temperature TSD Design guarantee value* 170 °C * Design guarantee value, Do not measurement.

No.A2035-3/11 Package Dimensions unit : mm (typ) 3336 -20 0 20 40 60 80 1000 2.0 1.6 1.2 0.8 0.4 Pd max -- Ta Ambient temperature, Ta -- C Allowable power dissipation, Pd max -- W Pin Assignment 1OUTA E OUTA VI ST VBB VCC IN1 2 3 4 5 6 7 8 9 10 11 12 13 IN2 VREF CR LB1947VC Top view 14 15 MD GND NC NC SANYO : HZIP15 21.6 (20.0) (14.55) (11.0) (9.05) HEAT SPREADER (11.0) (R1.75) (8.6) 3.0 17.9 12.4 3.35 11 5 0.4

No.A2035-4/11 Block Diagram 3 1 7 213 OUTA E OUTA VI ST VBB VCC IN1 IN2 VREF CR MD GND Control logic circuit Current select circuit One-shot multi- blanking time Thermal shutdown circuit UVLO Truth Table IN1 IN2 ST VI MD OUT A OUT A Operating mode H L H H L H L Forward, 2/5 times, FAST H L H H M H L Forward, 2/5 times, MIX H L H H H H L Forward, 2/5 times, SLOW H L H L L H L Forward, 1/5 times, FAST H L H L M H L Forward, 1/5 times, MIX H L H L H H L Forward, 1/5 times, SLOW H H H H L L H Reverse, 2/5 times, FAST H H H H M L H Reverse, 2/5 times, MIX H H H H H L H Reverse, 2/5 times, SLOW H H H L L L H Reverse, 1/5 times, FAST H H H L M L H Reverse, 1/5 times, MIX H H H L H L H Reverse, 1/5 times, SLOW L H H H L L L Brake, 2/5 times, FAST L H H H M L L Brake, 2/5 times, MIX L H H L L L L Brake, 1/5 times, FAST L H H L M L L Brake, 1/5 times, MIX L H H X H L L Brake, no current limiting L L H X X OFF OFF Output OFF X X L or OPEN X X OFF OFF Standby mode (circuit OFF) Except for MD pin, Low at input OPEN. MD M: determined by external voltage.

No.A2035-5/11 Pin Function Pin No. Pin name Function Equivalent circuit OUTA OUTA Output pin. 2 E Sense voltage control pin.

4 VI High: sense voltage is 2/5 of V REF

Low: sense voltage is 1/5 of VREF 50kΩ 40kΩ VCC 100μA VI

6 ST High: circuit operation ON

Low: standby mode

9 IN1 High: rotation mode

Low: brake mode

10 IN2 High: reverse mode

Low: forward mode 7 V BB Motor power supply voltage. 8 V CC Logic power supply voltage. 12 V REF Output current setting reference pin. Setting range: 0 to (VCC−2V) VCC VREF 3s 1s 13 CR Oscillator with self-excitation. 14 MD Current attenuation switching pin. Low : FAST DECAY High: SLOW DECAY M : MIX DECAY M is set by external power supply voltage. Range : 1.1 to 4.0V

15 GND Ground pin

5, 11 NC No connect

No.A2035-6/11 Sample Application Circuits 1. Forward/reverse motor with current limiter 3 1 7 213 OUTA E OUTA VI ST VBB VCC IN1 IN2 VREF CR MD GND RE 24V M Control logic circuit Current select circuit One-shot multi- blanking time Thermal shutdown circuit UVLO *Schottky barrier type for external diodes. Limiter current setting method I = V REF/ (5 × RE) IN1 IN2 ST OUT A OUT A Mode H L H H L Forward H H H L H Reverse L H H L L Brake L L H OFF OFF Output OFF − − L OFF OFF Standby mode

No.A2035-7/11 2. Forward/reverse motor 3 1 7 213 OUTA E OUTA VI ST VBB VCC IN1 IN2 VREF CR MD GND 24V M *Schottky barrier type for external diodes. Control logic circuit Current select circuit One-shot multi- blanking time Thermal shutdown circuit UVLO IN1 IN2 ST OUT A OUT A Mode H L H H L Forward H H H L H Reverse L H H L L Brake L L H OFF OFF Output OFF − − L OFF OFF Standby mode

No.A2035-8/11 3. PWM current control forward/reverse motor (MIX DECAY) 3 1 7 213 OUTA E OUTA VI ST VBB VCC IN1 IN2 VREF CR MD GND RE 24V M Control logic circuit Current select circuit One-shot multi- blanking time Thermal shutdown circuit UVLO *Schottky barrier type for external diodes.

No.A2035-9/11 Notes on Usage 1. VREF pin Because the VREF pin serves for input of the set current reference voltage, precautions against noise must be taken. 2. GND pin The ground circuit for this IC must be designed so as to allow for high-current switching. Blocks where high current flows must use low-impedance patterns and must be removed from small-signal lines. Especially the ground connection for the sensing resistor RE at pin E, and the ground connection for the Schottky barrier diodes should be in close proximity to the IC ground. The capacitors between VCC and ground, and VBB and ground should be placed close to the VCC and VBB pins, respectively. 3. CR pin setting (Switching off time, Noise cancel time) The noise cancel time (Tn) and the switching off time (Toff) are set by the following expressions: Noise cancel time: Tn ≈ C × R × ln {(1.0 − RI) / (4.0 − RI) [sec] CR charge current: 1.3mA Switching off time: Toff ≈ −C × R × ln (1.0 / 4.8) [sec] Internal configuration at CR pin C:680pF CR VCC line One-shot multi-blanking time circuit CR constant range: R = 4.7k to 100kΩ C = 330pF to 2200pF

No.A2035-10/11 Heat sink attachment Heat sinks are used to lower the semiconductor device junction temperature by leading the head generated by the device to the outer environment and dissipating that heat. a. Unless otherwise specified, for power ICs with tabs and power ICs with attached heat sinks, solder must not be applied to the heat sink or tabs. b. Heat sink attachment

  • Use flat-head screws to attach heat sinks.
  • Use also washer to protect the package.
  • Use tightening torques in the ranges 39-59Ncm(4-6kgcm) .
  • If tapping screws are used, do not use screws with a diameter larger than the holes in the semiconductor device itself.
  • Do not make gap, dust, or other contaminants to get between the semiconductor device and the tab or heat sink.
  • Take care a position of via hole .
  • Do not allow dirt, dust, or other contaminants to get between the semiconductor device and the tab or heat sink.
  • Verify that there are no press burrs or screw-hole burrs on the heat sink.
  • Warping in heat sinks and printed circuit boards must be no more than 0.05 mm between screw holes, for either concave or convex warping.
  • Twisting must be limited to under 0.05 mm.
  • Heat sink and semiconductor device are mounted in parallel. Take care of electric or compressed air drivers
  • The speed of these torque wrenches should never exceed 700 rpm, and should typically be about 400 rpm. c. Silicone grease
  • Spread the silicone grease evenly when mounting heat sinks.
  • Sanyo recommends YG-6260 (Momentive Performance Materials Japan LLC) d. Mount
  • First mount the heat sink on the semiconductor device, and then mount that assembly on the printed circuit board.
  • When attaching a heat sink after mounting a semiconductor device into the printed circuit board, when tightening up a heat sink with the screw, the mechanical stress which is impossible to the semiconductor device and the pin doesn't hang. e. When mounting the semiconductor device to the heat sink using jigs, etc.,
  • Take care not to allow the device to ride onto the jig or positioning dowel.
  • Design the jig so that no unreasonable mechanical stress is not applied to the semiconductor device. f. Heat sink screw holes
  • Be sure that chamfering and shear drop of heat sinks must not be larger than the diameter of screw head used.
  • When using nuts, do not make the heat sink hole diameters larger than the diameter of the head of the screws used. A hole diameter about 15% larger than the diameter of the screw is desirable.
  • When tap screws are used, be sure that the diameter of the holes in the heat sink are not too small. A diameter about 15% smaller than the diameter of the screw is desirable. g. There is a method to mount the semiconductor device to the heat sink by using a spring band. But this method is not recommended because of possible displacement due to fluctuation of the spring force with time or vibration. Binding head machine screw Countersunk head mashine screw Heat sink gap Via hole

PS No.A2035-11/11 This catalog provides information as of March, 2012. Specifications and information herein are subject to change without notice. SANYO Semiconductor Co.,Ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliab ility pr oducts, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equip ment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.