L8550SQLT1G LRC | Alldatasheet

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  1. FEATURES
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  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25º C) Collector current-continuoun 4. THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25º C Thermal Resistance, Junction–to–Ambient Total Device Dissipation, Alumina Substrate, (Note 2)@ TA = 25º C Derate above 25º C Thermal Resistance, Junction–to–Ambient Junction and Storage temperature RΘJA 417 ℃/W PD 225 mW TJ,Tstg −55∼+150 ℃ 556 mW/℃1.8 RΘJA ℃/W 2.4 L8550SQLT1G S-L8550SQLT1G General Purpose Transistors PNP Silicon Device Marking Shipping Parameter Symbol Limits Unit Collector-Emitter Voltage VCEO -25 V L8550SQLT1G 5SQ 3000/Tape&Reel mW/℃ VCollector-Base voltage VCBO -40 mA PD 300 mW Emitter-Base Voltage VEBO -12 Parameter Symbol Limits Unit V IC -800 SOT23 Leshan Radio Company, LTD. Rev.O Oct 2016 1/5

General Purpose Transistors PNP Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC =-1.0mA) Emitter-Base Breakdown Voltage (IE = -100µ A) Collector-Base Breakdown voltage (IC = -100µ A) Collector Cutoff Current (VCB = -35 V) Emitter Cutoff Current (VEB = -4V) ON CHARACTERISTICS DC Current Gain (IC =-100mA, VCE =-1V) Collector-Emitter Saturation Voltage (IC =-800mA, IB =-80mA) Symbol Min. Typ. ICBO nA - - -150 V(BR)EBO Vdc -12 - -40 - V(BR)CBO Vdc HFE 150 - 300 VCE(S) IEBO nA - - -150 Vdc - - -0.5 Unit V(BR)CEO Vdc -25 - - Max. Leshan Radio Company, LTD. Rev.O Oct 2016 2/5

General Purpose Transistors PNP Silicon 6.ELECTRICAL CHARACTERISTICS CURVES 0.0 0.1 0.2 0.3 0.4 0.5 0.001 0.01 0.1 1 10 VCEsat (V) IC,Collector Current (A) 150 ℃ 25℃ -55℃ IC/IB=10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 VBEsat (V) IC,Collector Current (A) 150℃ 25℃ -55℃ IC/IB=10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 VBEon (V) IC,Collector Current (A) VCE=1V 150℃ 25℃ -55℃ 100 150 200 250 300 350 400 450 500 0.001 0.01 0.1 1 10 HFE IC,Collector Current (A) 150℃ 25℃ -55℃ VCE=1V HFE vs. IC VBEon vs. IC VBEsat vs. IC VCEsat vs. IC Leshan Radio Company, LTD. Rev.O Oct 2016 3/5

General Purpose Transistors PNP Silicon 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VCE (V) IB,Base Current (A) IC=10mA IC=100mA IC=500mA IC=900mA IC=1.3mA IC=1.5mA VCE vs. IB Leshan Radio Company, LTD. Rev.O Oct 2016 4/5

General Purpose Transistors PNP Silicon 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 8.SOLDERING FOOTPRINT e L 0.114 MIN NOM 1.20 0.051 0.89 1 0.005 0.007 2.9 3.04 1.3 1.4 c 2.80 0.047 0.11 A 1.11 0.035 0.04 0.044 0.12 MAX MIN 0.055 0.09 b 0.37 E D 0.004 0.13 0.18 0.003 DIM INCHESMILLIMETERS MAXNOM Leshan Radio Company, LTD. Rev.O Oct 2016 5/5