L8050PLT1G LRC | Alldatasheet

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V CEO 25 V Collector-Base Voltage V CBO 40 V Emitter-Base Voltage V EBO Collector Current-continuoun I C 800 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,(1) P D T A =25°C 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance,Junction to Ambient R θ JA 556 °C/W Total Device Dissipation P D Alumina Substrate,(2) TA=25°C 300 mW Derate above 25°C 2.4 mW/°C Thermal Resistance,Junction to Ambient R θ JA 417 °C/W Junction and Storage Temperature T T S t g -55 to +150 °C SOT–23 BASE EMITTER COLLECTOR FEATURE ƽHigh current capacity in compact package. I C = 0.8A. ƽEpitaxial planar type. ƽNPN complement: L8050 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking L8050PLT1G 80P L8050PLT3G 80P L8050QLT1G 1YC L8050QLT3G 1YC Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel NPN Silicon L8050RLT1G 1YE L8050RLT3G 1YE 80S 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 80S L8050SLT1G L8050SLT3G L8050PLT1G Series Rev.O 1/4

LESHAN RADIO COMPANY, LTD. ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V (BR)CEO 25 –– V C =1.0mA) Emitter-Base Breakdown Voltage V (BR)EBO 5 –– V E =100µΑ) Collector-Base Breakdown Voltage V (BR)CBO 40 –– V C =100µΑ) Collector Cutoff Current (V CB =35V) I CBO – – 150 nA Emitter Cutoff Current (V EB =4V) I EBO – – 150 nA NOTE : PQRS h FE 100~200 150~300 200-400 300-600 ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted) Charateristic Unit DC Current Gain I C =100mA, V C E =1V h FE 100 - 600 Collector-Emitter Saturation Voltage C V CE(sat) - - Symbol Min Typ Max

0.5 V=800mA, =80mA)I

B L8050PLT1G Series Rev.O 2/4

LESHAN RADIO COMPANY, LTD. FIG.5 - Capacitance & Reverse-Biased Voltage 100 0.1 1 10 100 Reverse-Biased Voltage (V) Capacitance (pF) Cob FIG.4 - Cutoff Frequency & Collector Current 100 1000 1 10 100 1000 Collector Current (mA) Cutoff Frequency (MHz) V CE =10V FIG.3 - On Voltage & Collector Current 0.1 0.01 0.1 1 10 100 1000 Collector Current (mA) On Voltage (V) V BE(ON) @ V CE =1V FIG.1 - Current Gain & Collector Current 100 1000 0.001 0.01 0.1 1 10 100 1000 Collector Current (mA) hFE V CE =1V FIG.2 - Saturation Voltage & Collector Current 0.01 0.1 0.01 0.1 1 10 100 1000 Collector Current (mA) Saturation Voltage (V) V CE(sat) @ I C =10I B L8050PLT1G Series Rev.O 3/4

LESHAN RADIO COMPANY, LTD. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR SOT D JK L A C B S H GV mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 L8050PLT1G Series Rev.O 4/4