L8050 LRC | Alldatasheet

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Technical content

TRANSISTOR˄ NP N˅

FEATURES

P CM : 1 W ˄Tamb=25ć˅ Collector current I CM : 1.5 A Collector-base voltage V (BR)CBO : 40 V Operating and storage junction temperature range T J ˈT stg :- 5 5ć to +150 ć ELECTRICAL CHARACTERISTICS/i708 Tamb=25/i263 unless otherwise specified /i709 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) CBO Ic= 100 ­A ˈ I E =0 40 V Collector-emitter breakdown voltage V(BR) CEO I C = 0.1 mA , I B =0 25 V Emitter-base breakdown voltage V(BR) EBO I E = 100 ­Aˈ I C =0 5 V Collector cut-off current I CBO V CB = 40 V , I E =0 0.1 ­A Collector cut-off current I CEO V CE = 20 V , I B =0 0.1 ­A Emitter cut-off current I EBO V EB =5 V , I C =0 0.1 ­A h FE V CE = 1 V , I C = 100 mA 85 300 DC current gain h FE V CE = 1 V , I C =800 mA 40 Collector-emitter saturation voltage V CE (sat) I C = 800 mA, I B = 80 mA 0.5 V Base-emitter saturation voltage V BE (sat) I C = 800mA , I B = 80 mA 1.2 V Transition frequency f T V CE = 10 V, I C = 50mA f =30 MHz

100 MHz

FE(1) Rank BCD Range 85-160 120-200 160-300 123 TO/i252 92 1.EMITTER 2.BASE 3. COLLECTOR TO-92 Plastic-Encapsulate Transistors L L8050-1/3 LESHAN RADIO COMPANY, LTD.

Typical Characteristics L8050 L8050-2/3 LESHAN RADIO COMPANY, LTD.

D b E A C L e TO-92 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L Ö Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 Max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 Min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 Max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 Dimensions In Millimeters Dimensions In Inches 0.050TYP1.270TYP L8050-3/3 LESHAN RADIO COMPANY, LTD.