L4501DW1T1 LRC | Alldatasheet
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Technical content
V Collector-Base Voltage VCBO V Emitter-Base Voltage VEBO V Collector current-continuoun IC 150 mAdc THERMAL CHARATEERISTICS Symbol Max Unit Total Device Dissipation FR-5 Board, (1) PD 380 mW Thermal Resistance, Junction to Ambient R JA 328 oC/W Junction and Storage Temperature Tj ,Tstg -55 to +150 oC DEVICE MARKING L4501DW1T1=5H ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO V (IC=1mA) Emitter-Base Breakdown Voltage V(BR)EBO V (IE=50 Collector-Base Breakdown Voltage V(BR)CBO V (IC=50 Collector Cutoff Current (VCB=60V) ICBO 0.1 A Characteristic Parameter TA=25oC Characteristic L4501DW1T1 Silicon NPN Epitaxial Planer Transistor LESHAN RADIO COMPANY, LTD. L4501DW1T1-1/3 Feature Pb-Free Package is available. SC-88/SOT-363
0.1 A VEB=7V ON CHARACTERISTICS DC Current Gain Hfe 120 560 (IC=1mA, VCE=6.0V) Collector-Emitter Saturation Voltage (IC=50mA,IB=5mA) VCE(SAT) 0.4 V SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product Ft 180 MHz (VCE = 12.0V; IE =-2.0 mA,f=100MHZ) Output Capacitance(VCE=12V,f=1.0MHz) Cobo 3.5 Pf LESHAN RADIO COMPANY, LTD.
ORDERING INFORMATION
3000/Tape&Reel L4501DW1T1G 5H (Pb-Free) 3000/Tape&Reel L4501DW1T1 L4501DW1T1-2/3
LESHAN RADIO COMPANY, LTD. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 G
0.026 BSC
0.65 BSC
H --- 0.004 --- 0.10 J 0.004 0.010 0.10 0.25 K 0.004 0.012 0.10 0.30 N
0.008 REF
0.20 REF
S 0.079 0.087 2.00 2.20 PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4.EMITTER 2 5. BASE 2 6.COLLECTOR 1 B 0.2 (0.008) A G S H C N J K D6 P L 6 5 4 1 2 3 - B- M M 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm SC-88/SOT-363 L4501DW1T1-3/3 L4501DW1T1