L4401DW1T1 LRC | Alldatasheet

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-50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO V Collector current-continuoun IC -150 mAdc THERMAL CHARATEERISTICS Symbol Max Unit Total Device Dissipation FR-5 Board, (1) PD 380 mW Thermal Resistance, Junction to Ambient R JA 328 oC/W Junction and Storage Temperature Tj ,Tstg -55 to +150 oC DEVICE MARKING L4401DW1T1=5K ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO -50 V (IC=-1mA) Emitter-Base Breakdown Voltage V(BR)EBO V (IE=-50 Collector-Base Breakdown Voltage V(BR)CBO -60 V (IC=-50 Characteristic Parameter TA=25oC Characteristic L4401DW1T1 SC88 Silicon PNP Epitaxial Planer Transistor LESHAN RADIO COMPANY, LTD. L4401DW1T1-1/2

(VCB=-60V) ICBO -0.1 A Emitter Cutoff Current (VBE=-6V) IEBO -0.1 A ON CHARACTERISTICS DC Current Gain Hfe 120 560 (IC=-1mA, VCE=-6.0V) Collector-Emitter Saturation Voltage (IC=-50mA,IB=-5mA) VCE(SAT) -0.5 V SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product Ft 140 MHz (VCE = -12.0V; IE =2.0 mA,f=300MHZ) Output Capacitance(VCB=-12V,f=1.0MHz) Cobo Pf LESHAN RADIO COMPANY, LTD. L4401DW1T1-2/2 PACKAGE DIMENSIONS SC-88 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 G 0.026BSC 0.65BSC H ––– 0.004 ––– 0.10 J 0.004 0.010 0.10 0.25 K 0.004 0.012 0.10 0.30 N

0.008 REF

0.20 REF

S 0.079 0.087 2.00 2.20 V 0.012 0.016 0.30 0.40