L2SK3018WT1G LRC | Alldatasheet

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Technical content

  1. FEATURES
  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Low on-resistance.
  • Fast switching speed.
  • Easy to parallel.
  • ESD>500V
  • Low voltage drive (2.5V) makes this device ideal for portable equipment.
  • Easily designed drive circuits. 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25º C) Total power dissipation (TC=25° C) Channel temperature Storage temperature 1.Pw≤10µ s, Duty cycle≤1% 2 With each pin mounted on the recommended lands. Tstg -55~+150 ℃ PD(Note 2) 200 mW Tch 150 ℃ Drain Current Continuous ID ± 100 mA Pulsed IDP(Note 1) ± 400 Unit Drain–Source Voltage VDSS 30 V Gate-Source Voltage VGS ± 20 V L2SK3018WT3G KN 10000/Tape&Reel Parameter Symbol Limits L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V Device Marking Shipping L2SK3018WT1G KN 3000/Tape&Reel SC70(SOT-323) Leshan Radio Company, LTD. Rev.B Jun 2018 1/5 Drain Source(2) Gate(1) Gate Protection Diode M KN KN = Device Code M = Month Code /C0068/C0114/C0097/C0105/C0110 /C0071/C0097/C0116/C0101 /C0083/C0111/C0117/C0114/C0099/C0101 (3)

L2SK3018WT1G, S-L2SK3018WT1G N-channel MOSFET 4. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Gate-source leakage (VGS = ± 20V, VDS = 0V) Drain–Source Breakdown Voltage (VGS = 0, ID = 10μA) Zero Gate Voltage Drain Current (VGS = 0, VDS = 30 V) Gate Threshold Voltage (VDS = 3V, ID = 100µ A) Static Drain–Source On–State Resistance (ID = 10mA, VGS = 4V) (ID = 1mA, VGS = 2.5V) Forward transfer admittance (VDS = 3V, ID = 10mA) Input Capacitance (VDS = 5 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 5 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 5 V, VGS = 0, f = 1.0 MHz) nsRise Time tr - 35 - Turn–Off Delay Time td(off) - 80 Turn–On Delay Time (VDD =5 V, ID = 10mA,VGS=5V,RL = 500 Ω,RG = 10 Ω) td(on) - 15 - Fall Time tf - Coss pF - 9 - Crss pF - 4 - 80 - ｜Yfs｜ mS 20 - - Ciss pF - 13 - RDS(on) Ω - 5 8 - 7 13 VGS(th) V 0.8 - 1.5 VBRDSS V 30 - - IDSS μA Typ. Max. Unit IGSS μA - - ±1 Characteristic Symbol Min. Leshan Radio Company, LTD. Rev.B Jun 2018 2/5

L2SK3018WT1G, S-L2SK3018WT1G N-channel MOSFET 5.ELECTRICAL CHARACTERISTICS CURVES RDS(on) On resistance (Ω) ID,Drain Current(A) VGS=2.5V VGS=4V 0.0001 0.001 0.01 0.1 0 0.2 0.4 0.6 0.8 1 IS,Diode FOrward Current(A) VSD,Diode Forward Voltage(V) -55℃150℃ 25℃ 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 1 2 3 VGS,Gate to Source Voltage(V) -55℃150℃ 25℃ VDS=3V 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0 1 2 3 4 5 ID,Drain Current(A) VDS，Drain to Source Voltage(V) VGS=1.5V VGS=2V VGS=2.5V VGS=3V,3.5V,4V Ta=25℃ ID vs. VDS ID vs. VGS IS vs. VSD RDS(on) vs. ID Leshan Radio Company, LTD. Rev.B Jun 2018 3/5 ID,Drain Current(A)

L2SK3018WT1G, S-L2SK3018WT1G N-channel MOSFET 5.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.8 0.9 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 VGSTH,Threshold Voltage(V) Tj,Temperature(℃) ID=0.1mA 2.5 3.5 4.5 5.5 6.5 7.5 -50 -25 0 25 50 75 100 125 150 RDS(on),ON Resistance (Ω) Tj,Temperature(℃) VGS=4V,ID=100mA VGS=4V,ID=50mA 0 5 10 15 20 C-Capacitance(pF) VDS,Drain to Source Voltage(V) f=1MHz Ta=25℃ Crss Ciss Coss RDS(on) vs. Tj VGSTH vs. Tj Capacitance Leshan Radio Company, LTD. Rev.B Jun 2018 4/5

L2SK3018WT1G, S-L2SK3018WT1G N-channel MOSFET 6.OUTLINE AND DIMENSIONS 7.SOLDERING FOOTPRINT C 0.65 X 0.70 Y 0.90 DIM MIN A 1.90 B 0.65 He 2.00 2.10 2.40 ALL Dimension in mm SC70 e1 0.65 BSC L 0.20 0.35 0.56 E 1.15 1.30 1.35 e 1.20 1.30 1.40 c 0.10 0.15 0.25 D 1.80 2.05 2.20 A2 0.7 REF b 0.30 0.35 0.40 A 0.80 0.95 1.00 A1 0.00 0.05 0.10 SC70 DIM MIN NOR MAX Leshan Radio Company, LTD. Rev.B Jun 2018 5/5