L2SD2114KWLT1G_15 LRC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. h FE = 1200 (Typ.) 2) High emitter-base voltage. V EBO =12V (Min.) 3) Low V CE (sat). V CE (sat) = 0.18V (Typ.) C / I B = 500mA / 20mA) SOT– 23 (TO–236AB) S-L2SD2114KVLT1G Series BASE EMITTER COLLECTOR zAbsolute maximum ratings (Ta=25°C) Parameter V CBO V CEO V EBO I C P C Tj Tstg 25 V V V A(DC) W 0.5 A(Pulse)1 0.2 150 −55∼+150 Symbol Limits Unit Single pulse Pw=100ms Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature zElectrical characteristics(T a=25°C) Parameter Symbol BV CBO BV CEO BV EBO I CBO I EBO V CE(sat) f T Cob Min. 0.18 350 8.0 0.5 0.5 0.4 VI C =10µA I C =1mA I E =10µA V CB =20V V EB =10V I C B =500mA/20mA V CE =10V, I E =−50mA, f=100MHz V CB =10V, I E =0A, f=1MHz V V µA µA h FE 820 − 2700 V CE =3V, I C =10mA− V MHz pF Ron − 0.8 − I B =1mA, Vi=100mV(rms), f=1kHzpF Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Output On-resistance Measured using pulse current h FE Values Classification, Device Marking and Ordering Information Device h FE Marking Shipping L2SD2114KVLT1G 820~1800 BV 3000/Tape&Reel S-L2SD2114KVLT3G BV 10000/Tape&Reel S-L2SD2114KWLT1G L2SD2114KWLT3G 1200~2700 BW 10000/Tape&Reel ƽ 4) We declare that the material of product compliance with RoHS requirements. Rev.O 1/4 2SD2114KVLT1G SeriesL 5) We declare that the material of product compliance with RoHS requirements. 6) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SD2114KVLT1G L2SD2114KVLT3G 820~1800 L2SD2114KWLT1G 1200~2700 BW 3000/Tape&Reel S-L2SD2114KWLT3G
LESHAN RADIO COMPANY, LTD. zElectrical characteristic curves 0.4 0.8 1.2 1.6 2.0 Ta=25˚C 0.2µA 0.4µA 0.6µA 0.8µA 1.0µA 1.2µA 1.4µA 1.6µA I B 1.8µA 2.0µA COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.1 Grounded emitter output characteristics(Ι) 200 400 600 800 1000 02468 1 0 Ta 25°C Measured using pulse current. 0.2mA 0.4mA 0.6mA 0.8mA 1.0mA 1.2mA 1.4mA 1.6mA 1.8mA 2.0mA I B =0mA COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.2 Grounded emitter output characteristics(ΙΙ) 100 200 500 1000 COLLECTOR CURRENT : I C (mA) BASE TO EMITTER VOLTAGE : V BE (V) Fig.3 Grounded emitter propagation characteristics V CE Measured using pulse current. 25°C −25°C Ta=100°C 1 2 5 10 20 50 100 200 500 1000 100 200 500 1000 2000 5000 10000 Ta 25°C Measured using pulse current. DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (mA) Fig.4 DC current gain vs. collector current(Ι) V CE =5V 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 V CE Measured using pulse current. DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (mA) Fig.5 DC current gain vs. collector current(ΙΙ) 25°C −25°C Ta=100°C 2000 1000 200 500 100 2 5 10 20 50 100 200 500 1000 Ta 25°C Measured using pulse current. I C B =100 COLLECTOR SATURATION VOLTAGE : V CE(sat) (mV) COLLECTOR CURRENT : I C (mA) Fig.6 Collector-emitter saturation voltage vs. collector current(Ι) COLLECTOR SATURATION VOLTAGE : V CE(sat) (mV) COLLECTOR CURRENT : I C (mA) 2000 1000 200 500 100 2 5 10 20 50 100 200 5001000 I C B =25 Measured using pulse current. Fig.7 Collector-emitter saturation voltage vs. collector current(ΙΙ) Ta=100°C 25°C −25°C BASE SATURATION VOLTAGE : V BE(sat) (mV) COLLECTOR CURRENT : I C (mA) Fig.8 Base-emitter saturation voltage vs. collector current(Ι) 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 Ta 25°C Pulsed I C B =10 100 1 2 5 10 20 50 100 200 5001000 10000 5000 2000 1000 500 200 100 BASE SATURATION VOLTAGE : V BE(sat) (mV) COLLECTOR CURRENT : I C (mA) Fig.9 Base-emitter saturation voltage vs. collector current(ΙΙ) Measured using pulse current. l C B =10 25°C 100°C Ta=−25°C L2SD2114KVLT1G Series Rev.O 2/4 S-L2SD2114KVLT1G Series
LESHAN RADIO COMPANY, LTD. EMITTER CURRENT : I E (mA) TRANSITION FREQUENCY : f T (MHz) Fig.10 Gain bandwidth product vs. emitter current -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 10000 5000 2000 500 200 1000 100 Ta 25°C V CE 10V Measured using pulse current. 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO BASE VOLTAGE : V CB (V) Fig.11 Collector output capacitance vs. collector-base voltage 100 200 500 1000 Ta 25°C f 1MHz I E ON RESISTANCE : Ron (Ω) BASE CURRENT : I B (mA) Fig.12 Output-on resistance vs. base current 0.1 0.2 0.5 100 Ta=25°C f=1kHz Vi=100mV( rms) R L =1kΩ zRon measurement circuit Ron =× R L v v v v R L =1kΩ I B Output Input 1kHz 100mV(rms) v i V Rev.O 3/4 L2SD2114KVLT1G Series S-L2SD2114KVLT1G Series
LESHAN RADIO COMPANY, LTD. D JK L A C B S H GV mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 PIN 1. ANODE 2. NO CONNECTION 3. CATHODE 0.031 0.8 SOT-23 Rev.O 4/4 L2SD2114KVLT1G Series S-L2SD2114KVLT1G Series