L2SD1781KLT1 LRC | Alldatasheet
Document overview
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Technical content
Features
1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 Structure Epitaxial planar type NPN silicon transistor Absolute maximum ratings (Ta = 25C) L2SD1781K*LT1 SOT-23 /TO-236AB BASE COLLECTOR EMITTER L2SD1781K*LT1-1/4 4) Pb Free Package is Available. Device Marking Shipping L2SD1781KQLT1 L2SD1781KQLT1G L2SD1781KRLT1 L2SD1781KRLT1G AFQ AFQ(Pb-Free) AFR AFR(Pb-Free)
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ORDERING INFORMATION
LESHAN RADIO COMPANY,LTD. L2SD1781K*LT1 Electrical characteristics (Ta = 25C) Electrical characteristic curves DEVICE MARKING ltem Q R hFE 120~270 180~390 L2SD1781KQLT1=AFQ L2S1781KRLT1=AFR L2SD1781K*LT1-2/4
LESHAN RADIO COMPANY,LTD. L2SD1781K*LT1 L2SD1781K*LT1-3/4
LESHAN RADIO COMPANY,LTD. D J K L A C B S H G V mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.031 0.8 SOT-23 L2SD1781K*LT1 L2SD1781K*LT1-4/4