L2SC4617RT1G_15 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. BASE COLLECTOR General Purpose Transistors NPN Silicon EMITTER !! !!Absolute maximum ratings (Ta=25°C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Parameter V CBO V CEO V EBO I C P C Tj Tstg 60 V V V A 0.15 W0.15 150 55~+150 Symbol Limits Unit !! !!Electrical characteristics (Ta=25°C) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Parameter Symbol BV CBO BV CEO BV EBO I CBO I EBO h FE V CE(sat) f T Cob Min. 120 180 2.0 0.1 0.1 560 0.5 3.5 VI C 50µA I C I E 50µA V CB 60V V EB V V CE 6V, I C 1mA I C B 50mA/5mA V CE 12V, I E 2mA, f 30MHz V CB 12V, I E 0A, f 1MHz V V µA µA V MHz pF Typ. Max. Unit Conditions SC-89 h FE values are classified as follows: Item Q R S h FE 120~270 180~390 270~560 !!!!Device marking !!!! (S-)L2SC4617QT1G=BQ (S-) L2SC4617RT1G=BR (S-) L2SC4617ST1G=BS z We declare that the material of product compliance with RoHS requirements. Device Marking Shipping BQ BR
3000 Tape & Reel
10000 Tape & Reel
ORDERING INFORMATION
Rev.O 1/4 L2SC4617QT1G Series z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC4617QT1G S-L2SC4617QT3G S-L2SC4617RT1G S-L2SC4617RT3G S-L2SC4617ST1G S-L2SC4617ST3G
LESHAN RADIO COMPANY, LTD. !! !!Electrical characterristic curves Fig.1 Grounded emitter propagation characteristics 0.1 0.2 0.5 Ta 100 V CE =6V COLLECTOR CURRENT : I C (mA) BASE TO EMITTER VOLTAGE : V BE (V) −55 Fig.2 Grounded emitter output characteristics ( Ι ) 100 COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) 0.05mA 0.10mA 0.15mA 0.25mA 0.30mA 0.35mA 0.20mA Ta=25°C I B =0A 0.40mA 0.50mA 0.45mA 4 8 12 16 I B =0A Ta=25°C COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) 3µA 6µA 9µA 12µA 15µA 18µA 21µA 24µA 27µA 30µA Fig.3 Grounded emitter output characteristics ( ΙΙ ) 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 V CE =5V Ta=25°C Fig.4 DC current gain vs. collector current ( Ι ) DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (mA) 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 25°C −55°C Ta=100°C V CE Fig.5 DC current gain vs. collector current ( ΙΙ ) DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (mA) Fig. 6 Collector-emitter saturation voltage vs. collector current 0.2 COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 I C B =50 Ta=25°C L2SC4617QT1G Series Rev.O 2/4 S-L2SC4617QT1G Series
Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) 0.2 COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (mA) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 I C B =10 Ta=100°C 25°C −55°C Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : I C (mA) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 I C B =50 Ta=100°C 25°C −55°C Fig.9 Gain bandwidth product vs. emitter current 100 200 500 Ta=25°C V CE =6V EMITTER CURRENT : I E (mA) TRANSITION FREQUENCY : f T (MHz) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage COLLECTOR TO BASE VOLTAGE : V CB (V) EMITTER TO BASE VOLTAGE : V EB (V) COLLECTOR OUTPUT CAPACITANCE : Cob ( pF) EMITTER INPUT CAPACITANCE : Cib ( pF) 0.2 0.5 1 2 5 10 20 50 Cob Ta=25°C f 1MHz I E =0A I C =0A Cib Fig.11 Base-collector time constant vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc·r bb' (ps) EMITTER CURRENT : I E (mA) 100 200 Ta=25°C f=32MH Z V CB =6V LESHAN RADIO COMP ANY , LTD. Rev.O 3/4 L2SC4617QT1G Series S-L2SC4617QT1G Series
G M 0.08 (0.003) X D 3 PL J -X- -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. A B Y N 2 PL K C -T- SEATING PLANE DIM A MIN NOM MIN NOM INCHES 1.50 1.60 1.70 0.059 MILLIMETERS B 0.75 0.85 0.95 0.030 C 0.60 0.70 0.80 0.024 D 0.23 0.28 0.33 0.009 G 0.50 BSC H 0.53 REF J 0.10 0.15 0.20 0.004 K 0.30 0.40 0.50 0.012 L 1.10 REF M --- --- 10 --- N --- --- 10 --- S 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013
0.020 BSC
0.021 REF
0.006 0.008 0.016 0.020
0.043 REF
--- 10 --- 10 0.063 0.067 MAX MAX M H H L G RECOMMENDED PATTERN OF SOLDER PADS S LESHAN RADIO COMPANY, LTD. SC Rev.O 4/4 L2SC4617QT1G Series S-L2SC4617QT1G Series